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半导体型单壁碳纳米管中激子的一维扩散模型

发布时间:2019-05-10 05:08
【摘要】:针对架桥生长的半导体型单壁碳纳米管中激子的扩散特性,建立激子的一维扩散模型,进而考察研究碳纳米管中激子的扩散及复合发光过程.通过求解激子的一维扩散方程,模拟在有限长度下的碳管中激子密度、发光强度随管长和激子扩散长度之间的变化关系.研究结果表明,激子的扩散长度对激子发光强度有着重要影响,较大的激子扩散长度容易导致激子的边界淬灭,降低发光强度和发光效率.研究结果不但有助于碳纳米管中激子的扩散长度的测量,而且有助于未来对基于碳管的单激子器件尺寸的设计研究.
[Abstract]:Aiming at the diffusion characteristics of exciton in bridged single-walled carbon nanotubes, the one-dimensional diffusion model of exciton was established, and the diffusion and composite luminescence process of exciton in carbon nanotubes were investigated. By solving the one-dimensional diffusion equation of exciton, the relationship between exciton density and luminous intensity with tube length and exciton diffusion length in carbon tube with finite length is simulated. The results show that the exciton diffusion length has an important effect on the intensity of exciton luminescence, and the larger exciton diffusion length can easily lead to the quenching of exciton boundary and decrease the luminescence intensity and efficiency. The results are not only helpful to the measurement of exciton diffusion length in carbon nanotubes, but also helpful to the design and research of single exciton devices based on carbon tubes in the future.
【作者单位】: 湖州师范学院理学院;
【基金】:浙江省自然科学基金(LY15A040003) 浙江省大学生科技创新活动计划暨新苗人才计划(2015R427012)
【分类号】:TQ127.11;TB383.1

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