GaAs基纳米线的光学性质和激射（英文）

发布时间：2022-08-09 18:11

　　工作在红外波段的砷化镓（GaAs）基纳米线激光器在集成光电子学中起着重要作用.在过去的十几年中,纳米线激光器领域发展迅速,但是与工作在紫外和可见波段的材料相比,由于GaAs基材料的特性,近红外激光器的实现相对困难.在本文中,我们着重介绍了GaAs基纳米线的最新进展,特别是GaAs纳米线的光学性质和激射特性.详细介绍了GaAs纳米线的生长机理,包括晶相控制和复杂结构的生长.回顾并讨论了GaAs基纳米线的光学性质的影响因素和改进方法.最后,展示了GaAs基纳米线激光器的设计及其最新进展. 

【文章页数】：18 页

【文章目录】：
INTRODUCTION
Ga As-BASED NW GROWTH
    Ga As NW growth and crystal phase control
    Doping in Ga As NWs
    Ga As-based QW NW growth
OPTICAL PROPERTY OF Ga As-BASED NWs
    Optical properties of Ga As NWs
    Optical properties of doped Ga As NWs
    Optical properties of passivated Ga As NWs
    Wavelength tunability of Ga As-based alloy NWs
    QW structure in Ga As-based NWs
LASING FROM Ga As-BASED NWs
    Cavity mode of NW lasers
    Threshold reduction of Ga As-based NW lasing
    Optical gain improvement and lasing tunability
    Plasmonic Ga As-based NW lasing
SUMMARY AND PROSPECTS


【参考文献】：
期刊论文
[1]Ⅲ-Ⅴ族半导体与其异质结纳米线的生长（英文）[J]. 李昂,邹进,韩晓东.  Science China Materials. 2016(01)



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