通过界面修饰提高平面异质结钙钛矿太阳能电池的性能
发布时间：2018-10-05 18:11
【摘要】：由于有机-无机杂化钙钛矿材料具有优良的特性,被作为一种可应用于太阳能电池中的理想的光吸收材料。近几年,钙钛矿太阳能电池得到了迅猛的发展,被认为是最具有大规模应用前景的下一代太阳能电池。平面器件结构由于其结构简单、可制备柔性器件等特点而备受关注。但是由于钙钛矿层表面以及晶界处存在较多的缺陷,在钙钛矿层的界面处更容易产生电荷复合。另外电子传输层与钙钛矿层的能级匹配程度,也决定了器件抽取电子及阻挡空穴的能力,从而影响着器件的性能。因此,选取高电子迁移率、高电导率、高稳定性的电子传输材料,以改善钙钛矿层、电子传输层及电极的界面性质成为了一种简单而有效的方法。本文制备了倒置平面异质结钙钛矿太阳能电池。对器件的电子传输层进行了界面修饰,进而改善了器件性能。本论文主要开展了以下研究工作:1.采用聚乙烯基咔唑PVK和2,2'-[[6,6,12,12-四(甲氧基苯基)-6,12-二氢[2,3-d:2',3'-d']-s-茚并[1,2-b:5,6-b']二噻吩-2,8-二基]双[亚甲基(3-氧代-1H-茚-2,1(3H)-亚基]]双丙二腈ITIC共掺杂电子传输层PCBM,考察其对钙钛矿电池的性能影响。添加PVK和ITIC提高了PCBM的成膜性,从而使钙钛矿层、电子传输层和Al电极之间形成良好的界面接触,减少了界面缺陷,有效提高了器件电荷分离效率并抑制了电荷复合。当PVK添加浓度为4wt%,ITIC的添加浓度为6wt%时得到最优器件。相比于没有添加剂的器件,光电转换效率(PCE)由5.26%提高到9.93%,其中Voc=0.95V,Jsc=15.97 mA/cm2,FF=65.42%。另外,PVK与ITIC的加入抑制了空气中的水分与氧气对器件的侵蚀,从而提高了器件的稳定性。2.采用N,N'-二正辛烷基-3,4,9,10-傒四甲酰二亚胺(PTCDI-C8)对电子传输层PCBM进行界面修饰。由于PTCDI-C8具有较高的电子迁移率,在PCBM表面能够形成更平整的薄膜。因此减少了PCBM与Al电极之间的漏电流,从而提高了阴极的电子收集效率。另外,由于PTCDI-C8具有低的HOMO能级,能够阻挡空穴向电极的反向传输,从而减少界面处的电荷复合。当薄膜的厚度为20 nm时得到最优器件,与没有PTCDI-C8层的器件相比,PCE由5.26%提高到了8.65%。其中Voc=0.92 V,Jsc=15.68mA/cm2,FF=60%。另外,由于PTCDI-C8具有较高的稳定性,阻碍了空气对PCBM的侵蚀,从而提高了器件的稳定性。
[Abstract]:Due to the excellent properties of organic-inorganic hybrid perovskite materials, they can be used as an ideal photoabsorption material for solar cells. In recent years, perovskite solar cells have been rapidly developed and are considered to be the next generation solar cells with the most large application prospects. The planar device structure has attracted much attention because of its simple structure and the ability to fabricate flexible devices. However, there are many defects on the perovskite layer surface and grain boundary, so it is easier to produce charge recombination at the interface of the perovskite layer. In addition, the energy level matching between the electron transport layer and the perovskite layer also determines the ability of the device to extract electrons and block holes, thus affecting the performance of the device. Therefore, it is a simple and effective method to select electron transport materials with high electron mobility, high conductivity and high stability to improve the interfacial properties of perovskite layer, electron transport layer and electrode. In this paper, inverted plane heterojunction perovskite solar cells are fabricated. The interfacial modification of the electron transport layer is carried out to improve the performance of the device. This paper mainly carried out the following research work: 1. Polyethylcarbazole (PVK) and [6 (6) 6 (12) -tetra (methoxy phenyl) -612] -612 [2] 3: 2 (2) (2) (2) -dithiophene -28-diyl] bis [methylene (3-oxo) -1H -indene 1 (3H) -subgroup] bismalonitrile ITIC co-doped electron transport layer PCBM, was used to investigate its effect on the performance of perovskite cells. The addition of PVK and ITIC can improve the film-forming property of PCBM, thus forming a good interface contact between perovskite layer, electron transport layer and Al electrode, reducing the interface defects, effectively improving the charge separation efficiency of the device and restraining the charge recombination. The optimal device is obtained when the concentration of PVK is 4wtwt% and the concentration of ITIC is 6wt%. Compared with the devices without additives, the photoelectric conversion efficiency (PCE) was increased from 5.26% to 9.93%, in which Voc=0.95V,Jsc=15.97 mA/cm2,FF=65.42%. was used. In addition, the addition of PVK and ITIC can inhibit the erosion of air moisture and oxygen to the device, thus improving the stability of the device. The interfacial modification of electron transport layer (PCBM) was carried out by using N- (-)-dioctyl-3-octanoalkyl-3 (4)-octyl-4-(10 -)-tetracarboimide (PTCDI-C8) as an interface modifier. Due to the high electron mobility of PTCDI-C8, a more flat film can be formed on the surface of PCBM. Therefore, the leakage current between PCBM and Al electrode is reduced, and the electron collection efficiency of cathode is improved. In addition, because PTCDI-C8 has a low HOMO energy level, it can block the reverse transport of the hole to the electrode, thus reducing the charge recombination at the interface. When the thickness of the film is 20 nm, the optimal device is obtained. Compared with the device without PTCDI-C8 layer, the PCE is increased from 5.26% to 8.65%. Among them, Voc=0.92 VCU 15.68 Ma / cm ~ 2 FFF ~ (60). In addition, the high stability of PTCDI-C8 hinders the erosion of PCBM by air, thus improving the stability of the device.
【学位授予单位】：天津理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TM914.4
[Abstract]:Due to the excellent properties of organic-inorganic hybrid perovskite materials, they can be used as an ideal photoabsorption material for solar cells. In recent years, perovskite solar cells have been rapidly developed and are considered to be the next generation solar cells with the most large application prospects. The planar device structure has attracted much attention because of its simple structure and the ability to fabricate flexible devices. However, there are many defects on the perovskite layer surface and grain boundary, so it is easier to produce charge recombination at the interface of the perovskite layer. In addition, the energy level matching between the electron transport layer and the perovskite layer also determines the ability of the device to extract electrons and block holes, thus affecting the performance of the device. Therefore, it is a simple and effective method to select electron transport materials with high electron mobility, high conductivity and high stability to improve the interfacial properties of perovskite layer, electron transport layer and electrode. In this paper, inverted plane heterojunction perovskite solar cells are fabricated. The interfacial modification of the electron transport layer is carried out to improve the performance of the device. This paper mainly carried out the following research work: 1. Polyethylcarbazole (PVK) and [6 (6) 6 (12) -tetra (methoxy phenyl) -612] -612 [2] 3: 2 (2) (2) (2) -dithiophene -28-diyl] bis [methylene (3-oxo) -1H -indene 1 (3H) -subgroup] bismalonitrile ITIC co-doped electron transport layer PCBM, was used to investigate its effect on the performance of perovskite cells. The addition of PVK and ITIC can improve the film-forming property of PCBM, thus forming a good interface contact between perovskite layer, electron transport layer and Al electrode, reducing the interface defects, effectively improving the charge separation efficiency of the device and restraining the charge recombination. The optimal device is obtained when the concentration of PVK is 4wtwt% and the concentration of ITIC is 6wt%. Compared with the devices without additives, the photoelectric conversion efficiency (PCE) was increased from 5.26% to 9.93%, in which Voc=0.95V,Jsc=15.97 mA/cm2,FF=65.42%. was used. In addition, the addition of PVK and ITIC can inhibit the erosion of air moisture and oxygen to the device, thus improving the stability of the device. The interfacial modification of electron transport layer (PCBM) was carried out by using N- (-)-dioctyl-3-octanoalkyl-3 (4)-octyl-4-(10 -)-tetracarboimide (PTCDI-C8) as an interface modifier. Due to the high electron mobility of PTCDI-C8, a more flat film can be formed on the surface of PCBM. Therefore, the leakage current between PCBM and Al electrode is reduced, and the electron collection efficiency of cathode is improved. In addition, because PTCDI-C8 has a low HOMO energy level, it can block the reverse transport of the hole to the electrode, thus reducing the charge recombination at the interface. When the thickness of the film is 20 nm, the optimal device is obtained. Compared with the device without PTCDI-C8 layer, the PCE is increased from 5.26% to 8.65%. Among them, Voc=0.92 VCU 15.68 Ma / cm ~ 2 FFF ~ (60). In addition, the high stability of PTCDI-C8 hinders the erosion of PCBM by air, thus improving the stability of the device.
【学位授予单位】：天津理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TM914.4
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