少子寿命跟踪在异质结电池生产中的应用

发布时间：2018-10-09 21:18

【摘要】：异质结电池是量产的高效晶体硅太阳电池之一,开发简单有效的监控方案是规模化生产的前题.通过监测a-Si:H(i)/c-Si/a-Si:H(i),a-Si:H(p~+)/a-Si:H(i)/c-Si/a-Si:H(i)/a-Si:H(n~+),TCO/a-Si:H(p~+)/a-Si:H(i)/c-Si/aSi:H(i)/a-Si:H(n~+)三种异质结的有效少子寿命来监控太阳电池生产过程中各层薄膜的沉积质量,追踪电池性能,结果发现,各异质结的隐性开压(impliedVoc),赝填充因子(pFF)等在低于~2ms时,与寿命呈明显的正相关关系,而当少子寿命超过~2ms时,上述电参数变化很小,趋于饱和状态,最终的电池效率也遵循这一规律.这可以解释为硅材料在非平衡态下的费米能级之差随着表面复合的减少趋于极大值所致.研究表明,采用少子寿命跟踪的方法,可以判断非晶硅层的质量、透明氧化物薄膜沉积过程中对非晶硅的轰击损伤、分析和预测电池性能,同时可监控产线的稳定性和异常情况.
[Abstract]:Heterojunction cell is one of the high-efficient crystal silicon solar cells with mass production. The development of simple and effective monitoring scheme is the precondition of large-scale production. By monitoring the effective minor carrier lifetime of a-Si:H (i) / c-Si / a-Si: h (i) / a-Si: h (p ~) -a-SiH (i) / c-Sia-Si: h (i) / a-Si: h (n~) / TCO-ra-Si: h (p~) / a-SivoH (i) / c-Sia-Siv-H / (i) / a-Siw (n~) three heterojunctions, the deposition quality of each layer of thin films in the solar cell production process was monitored, and the cell performance was tracked. The occult open pressure (impliedVoc), pseudo-filling factor (pFF) of each heterojunction is positively correlated with the lifetime when it is less than 2 Ms. When the minority carrier lifetime is longer than 2 Ms, the change of the above electrical parameters is very small and tends to be saturated. The final battery efficiency also follows this rule. This can be explained by the fact that the difference of Fermi level in the nonequilibrium state of silicon material tends to maximum with the decrease of surface recombination. The results show that the minority carrier lifetime tracking method can be used to judge the quality of amorphous silicon layer, damage the amorphous silicon by bombardment during the deposition process of transparent oxide film, and analyze and predict the performance of the battery. At the same time, it can monitor the stability and abnormal condition of the production line.
【作者单位】：保定天威英利新能源有限公司光伏材料与技术国家重点实验室;河北大学物理科学与技术学院;
【基金】：国家国际科技合作专项(编号:2015DFE62900)资助项目
【分类号】：TM914.4

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