挠曲电压电材料的设计
发布时间：2018-10-22 18:20
【摘要】：传统压电陶瓷的压电性在温度高于居里点时会消失,这极大的限制了压电陶瓷在高温下的应用。利用铁电材料的挠曲电效应设计挠曲电压电材料能解决这一问题。本文主要通过实验提出两种设计挠曲电压电材料的方法,当铁电陶瓷圆片放置在金属环或通过不同组分的陶瓷在高温扩散使其具有拱形结构,在应力的作用下都可以得到由挠曲电效应产生的表观压电响应,并且表观压电响应可以在温度高于居里点时仍稳定存在。本论文提供了一种方法可以设计出在高温机电应用的材料。(1)提出点环设计即把压电陶瓷片放在金属圆环上,通过在样品中心点施加压力,使样品弯曲产生挠曲电效应得到表观压电响应。简单的公式推导可以证明由挠曲电效应可以产生表观压电响应。利用点环设计得到BaTi03压电陶瓷表观压电系数d33达256pC/N,计算得到的挠曲电系数数量级其他铁电氧化物一致。BTO陶瓷圆片的表观d33可以在高温(Tc)稳定存在,在300℃为167pC/N。(2)为了简化点环设计,提出一种由两种不同组分的陶瓷圆片在高温扩散形成的拱形结构(点面设计),当具有拱形结构的陶瓷片在没有圆环的支撑时,受到力的作用可以产生弯曲和挠曲电效应。NBBT6陶瓷样品分别与NBBT8陶瓷样和BST陶瓷进行扩散,得到具有拱形结构的NBBT6、NBBT8与BST陶瓷的表观d33在高温(Tc)仍存在,在400℃,NBBT6表观d33为10pC/N,NBBT8陶瓷为7pC/N。居里温度Tc低于常温的BST陶瓷圆片的表观d33直到200℃仍为1pC/N。
[Abstract]:The piezoelectric properties of traditional piezoelectric ceramics will disappear when the temperature is higher than the Curie point, which greatly limits the application of piezoelectric ceramics at high temperature. Using the flexural effect of ferroelectric materials to design flexural voltage-electric materials can solve this problem. In this paper, two methods of designing flexural voltage-electric materials are put forward by experiments. When ferroelectric ceramic wafers are placed in metal rings or diffused at high temperature by different components of ceramics, they have arched structures. Under the action of stress, the apparent piezoelectric response caused by the flexural effect can be obtained, and the apparent piezoelectric response can still exist stably when the temperature is higher than the Curie point. In this paper, a method is provided to design materials for high temperature electromechanical applications. (1) A point ring design is proposed, in which piezoelectric ceramic chips are placed on metal rings and applied pressure at the center of the sample. The surface piezoelectric response was obtained by flexural electric effect of the sample. The simple formula derivation can prove that the apparent piezoelectric response can be generated by the flexural electric effect. The apparent piezoelectric coefficient d33 of BaTi03 piezoelectric ceramics is up to 256 PC / N by point ring design. The calculated flexural electrical coefficient is consistent with that of other ferroelectric oxides. The apparent d33 of BTO ceramic wafer can exist stably at high temperature (Tc). In order to simplify the design of point ring at 300 鈩，
本文编号：2287946
[Abstract]:The piezoelectric properties of traditional piezoelectric ceramics will disappear when the temperature is higher than the Curie point, which greatly limits the application of piezoelectric ceramics at high temperature. Using the flexural effect of ferroelectric materials to design flexural voltage-electric materials can solve this problem. In this paper, two methods of designing flexural voltage-electric materials are put forward by experiments. When ferroelectric ceramic wafers are placed in metal rings or diffused at high temperature by different components of ceramics, they have arched structures. Under the action of stress, the apparent piezoelectric response caused by the flexural effect can be obtained, and the apparent piezoelectric response can still exist stably when the temperature is higher than the Curie point. In this paper, a method is provided to design materials for high temperature electromechanical applications. (1) A point ring design is proposed, in which piezoelectric ceramic chips are placed on metal rings and applied pressure at the center of the sample. The surface piezoelectric response was obtained by flexural electric effect of the sample. The simple formula derivation can prove that the apparent piezoelectric response can be generated by the flexural electric effect. The apparent piezoelectric coefficient d33 of BaTi03 piezoelectric ceramics is up to 256 PC / N by point ring design. The calculated flexural electrical coefficient is consistent with that of other ferroelectric oxides. The apparent d33 of BTO ceramic wafer can exist stably at high temperature (Tc). In order to simplify the design of point ring at 300 鈩，
本文编号：2287946
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