Radiation Damage Analysis of Individual Subcells for GaInP/G

发布时间：2024-03-02 04:20

　　The radiation damage of three individual subcells for GaInP/GaAs/Ge triple-junction solar cells irradiated with electrons and protons is investigated using photoluminescence(PL) measurements. The PL spectra of each subcell are obtained using different excitation lasers. The PL intensity has a fast degradation after irradiation,and decreases as the displacement damage dose increases. Furthermore, the normalized PL intensity varying with the displacement damage dose is analyzed in detail, and then...

【文章页数】：4 页


本文编号：3916325