碳化硅MOSFET的特性及应用研究

发布时间：2017-12-28 05:43

本文关键词：碳化硅MOSFET的特性及应用研究　出处：《安徽工业大学》2016年硕士论文　论文类型：学位论文

【摘要】：与硅、砷化镓相比,碳化硅作为第三代半导体材料主要成员之一,具有宽禁带、高热导率、高电子饱和漂移速率等特性。以SiC MOSFET为例,开关频率高、耐高温和低导通电阻等特性使得SiC MOSFET深受高电压大功率开关设备的青睐。本文对SiC MOSFET的静态特性及开关特性进行分析,通过分析来选取论文研究所需要的SiC MOSFET型号。到目前为止,国内SiC MOSFET方面还处于研究初阶段,并没有非常成熟的驱动电路。本文围绕所选型号的SiC MOSFET进行驱动电路设计,以期望使SiC MOSFET得到理想的驱动波形使其导通关断;同时,本文以升压斩波拓扑电路为基础,设计两路BOOST并联电路,一路为碳化硅功率器件,另一路为硅基功率器件,在一定的测试环境下进行开关实验及结温实验。实验结果不仅验证了驱动电路设计的可行性,还通过实验数据对比证明SiC MOSFET在开关频率、导通关断及结温方面较Si MOSFET具有优越性。以往的多个MOSFET串并联都是利用DSP或者其他外接设备输出多路PWM波实现单对单驱动功率器件的导通关断。但是这种情况下,回路的不对称性会造成驱动信号到达栅极的时间不一致而致使MOSFET导通关断时时间不一致。通过分析一些已经发表的关于MOSFET串并联的研究,在他们研究的基础上提出一种易于驱动串联拓扑,该拓扑可以实现多个MOSFET的串联仅需单个外部驱动,这样就可以解决在串联中由于驱动信号到达栅极时间不一致而导致的导通关断时间不同步,并将其应用到升压斩波电路中。
[Abstract]:Compared with silicon and gallium arsenide, silicon carbide is a main member of the third generation semiconductor materials. It has wide band gap, high thermal conductivity and high electron saturation drift rate. Taking SiC MOSFET as an example, the characteristics of high switching frequency, high temperature resistance and low conduction resistance make SiC MOSFET popular with high voltage and high-power switching equipment. In this paper, the static and switching characteristics of SiC MOSFET are analyzed, and the SiC MOSFET model is selected by the analysis of the paper. So far, the domestic SiC MOSFET is still in the initial stage of research, and there is no very mature drive circuit. The SiC MOSFET on the selected model of driving circuit design, in order to make the SiC MOSFET get the ideal driving waveform which is turned off; at the same time, based on the boost chopper circuit topology, the design of two parallel BOOST circuit is a path for the SiC power devices, another way for silicon based power devices, switches the experimental and experimental test in junction temperature environment. The experimental results not only verify the feasibility of the drive circuit design, but also prove that SiC MOSFET has advantages over Si MOSFET in terms of switching frequency, conduction turn off and junction temperature through experimental data comparison. The previous multiple MOSFET series parallel connection is to use DSP or other external devices to output multiple PWM waves to achieve single - to - single drive power devices. However, in this case, the asymmetry of the loop will cause the time of the drive signal to reach the gate, which causes the time of the MOSFET to turn off the off time. Through the analysis of some published studies on MOSFET series parallel, on the basis of their research put forward a kind of easy driving series series topology, only a single external drive to achieve a number of MOSFET the topology, so that it can solve the guide clearance in the series due to the driving signal to reach the gate time inconsistent fault time synchronization, and its application to boost chopper circuit.
【学位授予单位】：安徽工业大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN386

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