基于金属氧化物半导体的电子器件集成

发布时间：2017-12-28 09:11

本文关键词：基于金属氧化物半导体的电子器件集成　出处：《山东大学》2016年硕士论文　论文类型：学位论文

【摘要】：本文在第1章首先介绍了可穿戴设备、柔性显示器、透明屏幕等应用的需求对柔性电子学和透明电子学发展的促进。接着介绍了柔性电子学和透明电子学中中的有希望得到广泛应用的材料：非晶铟镓锌氧化物(amorphous indium gallium zinc oxide,以下缩写为α-IGZO)、氧化亚锡(tin monoxide,以下缩写为SnO)等金属氧化物半导体和五氧化二钽(以下用其化学式Ta2O5)金属氧化物介质,其中着重研究了这些材料的历史发展和研究情况,包括材料性能以及相关的应用,紧接着引出本文的研究动机。第2章介绍了常见半导体器件的历史发展、工作原理和相关应用,包括薄膜晶体管(thin film transistor,以下用其缩写TFT)、肖特基势垒二极管(Schottky barrier diode,以下用其缩写SBD)和金属-介质-金属(metal-insulator-metal,以下用其简称MIM)二极管。第3章列出了实验中器件制备和表征的常见方法和设备,包括衬底清洗、射频磁控溅射、电子束蒸发、热蒸发、shadow mask、扫描电子显微镜、紫外曝光、电子束曝光和干法刻蚀。读研期间的实验主要在第4章中介绍,可以分为工艺摸索、器件制备和器件集成三个部分。工艺摸索部分研究了AR-P 5350光刻胶光刻工艺的摸索,IGZO干法刻蚀工艺的摸索,溅射IGZO制备TFT工艺的摸索。器件制备部分详细研究了SnO SBD,讨论了欧姆电极材料和肖特基电极材料的选择,探究了不同结构、不同肖特基金属电极、不同SnO厚度对二极管性能的影响,分析了铝与SnO接触的能带结构。器件制备部分最后研究了了基于Ta2O5的MIM二极管,开关比可达l03。在器件集成部分,基于IGZO的二极管与13.56 MHz射频识别(radio frequency identification,以下用其缩写RFID)天线被集成到柔性聚酰亚胺衬底上,发现基于IGZO的二极管能够整流手机近场通信(near field communication,以下用其简称NFC)发射出的13.56 MHz无线电,有望为无源RFID标签的逻辑控制部分和记忆存储部分提供直流电源。第5章为结论和展望,主要对攻读硕士学位三年期间的工作的总结以及对氧化物半导体器件的后续研究方向的设计。论文的结尾部分主要是论文中的参考文献、攻读硕士学位期间所获得的心得以及致谢。
[Abstract]:In the first chapter, we first introduce the requirements of wearable devices, flexible displays, transparent screens and other applications, and promote the development of flexible electronics and transparent electronics. Then it introduces the flexible electronics and transparent electronics in hope of widely used materials: amorphous indium gallium zinc oxide (amorphous indium gallium zinc oxide, abbreviated as alpha -IGZO), stannous oxide (tin monoxide, abbreviated as SnO) and other metal oxide semiconductor and five (below two tantalum oxide the chemical formula Ta2O5) metal oxide dielectric, which focuses on the historical development and research situation of these materials, including material properties and related applications, and then leads to the study motivation. The second chapter introduces the common semiconductor device development history, working principle and related applications, including a thin film transistor (thin film transistor, following by the acronym TFT), Schottky (Schottky barrier diode diode with the following abbreviation SBD) and the metal insulator metal (metal-insulator-metal, following the MIM diode). The third chapter lists the common methods and devices for device preparation and characterization in the experiment, including substrate cleaning, RF magnetron sputtering, electron beam evaporation, thermal evaporation, shadow mask, scanning electron microscope, UV exposure, electron beam exposure and dry etching. During the study period, the experiment is mainly introduced in the fourth chapter, which can be divided into three parts: process groping, device preparation and device integration. The fumble of AR-P 5350 photoresist photolithography process, the exploration of IGZO dry etching process and the exploration of TFT process by sputtering IGZO are studied in the process exploration. The device fabrication part has studied SnO SBD in detail, discussed the choice of ohmic electrode material and Schottky electrode material, explored the influence of different structures, different Schottky metal electrodes and different SnO thickness on diode performance, and analyzed the energy band structure of aluminum contact with SnO. In the device part, the MIM diode based on Ta2O5 is finally studied, and the switch ratio is up to L03. The integrated device part, IGZO diode and 13.56 MHz radio frequency identification (radio frequency identification, based on the following abbreviation RFID) antenna is integrated into the flexible polyimide substrate, IGZO diode rectifier to mobile phone based on near field communication (near field communication, with the following referred to as NFC) 13.56 MHz radio emission, is expected to for passive RFID tag logic control part and memory part provides a DC power supply. The fifth chapter is the conclusion and outlook, the main attack design master's degree three years work summary and the oxide semiconductor device in the direction of follow-up study. The end of the paper is mainly the references in the paper, the experience gained during the master's degree and the acknowledgement.
【学位授予单位】：山东大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN303

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