不同功能层对量子点电致发光器件性能的影响

发布时间：2018-01-01 18:36

本文关键词：不同功能层对量子点电致发光器件性能的影响　出处：《北京交通大学》2016年硕士论文　论文类型：学位论文

【摘要】：量子点是一种性能优良的荧光材料,激发光谱宽、发射光谱窄、发光颜色可以通过调节粒径大小来控制、光化学稳定性好、具有较高的电子迁移率,量子点在电致发光器件方面有巨大的应用潜力。基于半导体量子点的发光二极管(QLED)器件具有色彩饱和、纯度高、单色性佳、颜色可调以及可以用比较简单的溶液制备方法获得并可大规模制备等优点,解决了有机发光二极管(OLED)中有机发光材料的发光不稳定、颜色不可调、半峰宽较宽生产成本高和操作工艺复杂等缺点,是下一代平板显示和固态照明的理想选择。本论文主要研究了通过增加量子点电致发光器件中载流子的传输来改善和提高器件的发光性能。(1)以Poly-TPD和PVK作为空穴传输材料,分别制备了两者混合溶液作为空穴传输层、分层旋涂作为空穴传输层的器件,两者在电流特性和发光特性上均较标准器件有所提升。在复合空穴传输层器件中,不同Poly-TPD和PVK混合比例的器件在性能上有所差异,当两者比例为1：1时,器件发光性能最优。分层旋涂器件中,PVK层的厚度(控制PVK不同浓度)影响器件的载流子的注入,当PVK浓度为4mg/mL时,器件发光亮度最大。(2)制备了倒置结构的绿光量子点发光器件,运用纳米氧化锌颗粒作为电子传输层,通过在ZnO层和量子点层中间加入超薄电荷缓冲层PFN,利用PFN的电荷传输特性,增加器件中电子注入和传输,提高器件的发光亮度,当超薄层旋涂转速为2500rpm, PFN厚度最佳,器件的性能达到最优,发光亮度最大。最后,我们又利用空穴型有机聚合物材料发光材料MEH-PPV和核壳结构蓝光量子点CdSe/ZnS制备了复合器件,研究了复合型器件的电致发光光谱,研究了蓝光量子点QDs(B)掺杂MEH-PPV复合体系的发光特性及量子点QDs(B)掺杂浓度(质量分数)不同对器件发光特性的影响,同时也制备了非掺杂的白光发光二极管器件,并从器件的性能不同分析了掺杂法和非掺杂法对于器件中载流子传输的强弱。研究如何增加量子点器件中载流子的注入和传输,有利于器件平衡器件中的正负载流子,降低漏电流的产生,提高器件的发光性能。这为量子点电致发光器件的大规模生产乃至商业化提供了重要指导和参考。
[Abstract]:Quantum dot fluorescent material is a kind of excellent performance, broad excitation spectrum, narrow emission spectrum, light color can be controlled by adjusting the particle size, photochemical stability, high electron mobility, quantum dots in electroluminescence has great potential for application in light emitting devices. The light emitting diode semiconductor based on quantum dots (QLED) device with high purity, color saturation, color is good, color is adjustable and can use relatively simple solution preparation method and can obtain the advantages of large-scale production, solve the organic light emitting diode (OLED) in organic light emitting luminescent material is not stable, the color is not adjustable, disadvantages of wider half peak production the high cost and complex operation process, is the next generation of flat panel display and solid-state lighting. This paper mainly studies the transmission through increased quantum dot electroluminescent device carrier to improve and enhance The luminescence performance of the device. (1) with Poly-TPD and PVK as hole transport materials, were prepared by the mixed solution as the hole transport layer, layered spin coating device as a hole transport layer, both in the current characteristics and luminescent properties were improved. Compared with the standard device in composite hole transporting layer, different devices Poly-TPD and PVK mix proportion of the differences in the performance, when the ratio of 1:1, the luminescence performance optimal. Layered spin coating device, the thickness of the PVK layer (PVK concentration control) effect of carrier injection device, when the PVK concentration is 4mg/mL, the maximum brightness device (2) preparation. The green light quantum point inverted light-emitting devices, the use of nano particles as Zinc Oxide electron transport layer, through the middle of the ZnO layer and the quantum dot layer with thin buffer layer using the PFN charge, the charge transport properties of PFN, increase the device Electron injection and transmission, improve the brightness of the device, when the thin layer spin coating speed is 2500rpm, the thickness of PFN, the performance of the device to achieve optimal brightness maximum. Finally, we use the hole type organic polymer composite devices emitting blue light MEH-PPV and core-shell structure material of CdSe/ZnS quantum dots preparation, electroluminescence spectroscopic study on the composite device, on the blue QDs quantum dots (B) luminescent properties of doped MEH-PPV composites and QDs quantum dots (B) doping concentration (mass fraction) influence on the luminescence properties of the devices, but also for the non doped light emitting diode devices were prepared, and the performance of the device is different from the analysis of the doping method and non doping method for carrier transfer device in strength. How to increase the charge injection and transport of quantum dot devices, is conducive to the balance of positive and negative carrier device in the device, It can reduce the leakage current and improve the luminescent performance of the device. This provides important guidance and reference for large-scale production and commercialization of quantum dot electroluminescent devices.

【学位授予单位】：北京交通大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN383.1;O471.1

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