集成高辐射率纳米结构的MEMS红外光源研究

发布时间：2018-01-03 11:29

  本文关键词：集成高辐射率纳米结构的MEMS红外光源研究　出处：《中北大学》2017年硕士论文　论文类型：学位论文

  更多相关文章： 微机电系统 红外光源 辐射率 纳米结构 红外光谱 调制特性

【摘要】：微机电系统(Micro-Electro-Mechanical System,MEMS)红外光源基于热辐射原理,具有体积小、功耗低、调制频率高、波长范围宽、寿命长等特点。随着纳米技术及纳米结构与传感器的集成逐渐成为关注的热点,本文创新性地采用等离子体工艺制备了高辐射率的纳米结构,并集成于MEMS红外光源上,大幅提升了光源的辐射效率。本论文的工作分为以下几个方面:研究了MEMS红外光源的国内外发展现状;从红外辐射的理论出发,对基于多晶硅热阻材料的MEMS红外光源进行了理论设计分析,并在此基础上完成了结构设计的ANSYS仿真和多晶硅掺杂的TCAD仿真优化;对集成于光源的高辐射率纳米结构进行了微观机理分析及FDTD仿真优化,并完成了基于硅基底及碳基底的纳米结构的制备及表征,同时对MEMS红外光源制备过程中涉及的关键工艺进行了单步工艺开发;在此基础上,整合出了基于多晶硅的整体工艺流程并进行了流片实验;对封装完成的MEMS红外光源进行了动态及静态性能测试。本文研制的MEMS红外光源的特点在于,利用不同的等离子工艺刻蚀硅基底形成中红外波段高辐射率的纳米结构,并集成于光源表面,由此大幅提升红外光源的辐射效率及电光转换效率。与已有的MEMS红外光源相比,通过集成宽光谱范围的高辐射率纳米结构,能够增加窄波段范围内的红外光谱辐射强度,并且通过控制热电阻的输入电压可以控制红外光源辐射的窄波段范围,提高利用率,利于实现产业化推广。测试结果显示,制备的高辐射率纳米结构的辐射光谱范围在2~8μm,辐射率高达85%以上;集成高辐射率纳米结构的MEMS红外光源在631.6mW的输入功率下,辐射区温度可以达到280~460℃,辐射能量比未集成时提高了101.2%,在50Hz的调制频率下,调制深度可达30%。光源的静态特性和动态特性均能满足红外气体传感器的应用需求。此外,本文还研究了基于其他不同热电阻材料的高辐射率MEMS红外光源制备,例如,Pt、非晶碳等。这为后期制备多种不同类型的MEMS红外光源奠定坚实的基础。
[Abstract]:Micro-Electro-Mechanical system (MEMS) infrared light source is based on the principle of thermal radiation. It has small volume and low power consumption. With the characteristics of high modulation frequency, wide wavelength range, long life and so on, the nanotechnology and the integration of nanostructure and sensor have gradually become the focus of attention. In this paper, high emissivity nanostructures were prepared by plasma technology and integrated into MEMS infrared light source. The work of this paper is divided into the following aspects: the development of MEMS infrared light source at home and abroad is studied; Based on the theory of infrared radiation, the MEMS infrared light source based on polysilicon thermal resistance material is theoretically designed and analyzed. On this basis, the ANSYS simulation of structure design and the simulation optimization of polysilicon doped TCAD are completed. The microstructure of high emissivity nanostructures integrated with light source was analyzed and optimized by FDTD simulation. The preparation and characterization of nanostructures based on silicon and carbon substrates were completed. At the same time, the key process involved in the preparation of MEMS infrared light source is developed. On this basis, the whole technological process based on polysilicon is integrated and the flow sheet experiment is carried out. The dynamic and static performance of the MEMS infrared light source is tested. The characteristics of the MEMS infrared light source developed in this paper are as follows. The nanostructures with high emissivity in the middle infrared band were formed by different plasma etching process and integrated on the surface of the light source. As a result, the radiation efficiency and electro-optic conversion efficiency of infrared light source are greatly improved. Compared with the existing MEMS infrared light source, high emissivity nanostructures are integrated in a wide spectrum range. It can increase the infrared spectral radiation intensity in the narrow band range, and by controlling the input voltage of the thermal resistance, it can control the narrow band range of the infrared light source radiation, and improve the utilization ratio. The results show that the spectral range of the prepared nanostructures is 2 ~ 8 渭 m and the emissivity is more than 85%. Under the input power of 631.6 MW, the temperature in the radiation region of the MEMS infrared light source integrated with high emissivity nanostructures can reach 280 鈩，

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