基于TCAD的SJ-IGBT特性设计与分析

发布时间：2018-01-06 17:19

本文关键词：基于TCAD的SJ-IGBT特性设计与分析　出处：《西南交通大学》2017年硕士论文　论文类型：学位论文

【摘要】：绝缘栅双极型晶体管(Insulated Gate Bipolar Transistor,IGBT)作为电力电子领域中的—'种典型开关器件,具有输入阻抗大、导通压降低、驱动功率小等优点,在开关电源、家用电器、轨道交通等领域发挥着日益重要的作用。然而,传统IGBT存在导通压降和关断功耗的矛盾关系。如何有效改善器件导通压降和关断功耗之间的折中关系一直是IGBT设计的难点。针对此问题,在IGBT理论研究基础上,通过在器件漂移区中引入超结(Super Junction,SJ)结构,目的在于进一步提高IGBT的综合性能。本文使用Medici TCAD软件对SJ-IGBT器件特隆进行了较为系统地仿真赫分析,具体研究内容如下:第一,分析了 SJ-IGBT器件工作原理,研究了柱区宽度、厚度、掺杂浓度对器件静动态特性的影响。当P柱和N柱保持电荷平衡时,器件耐压特性明显优于FS-IGBT。当P柱和N柱电荷失衡时,器件击穿电压会有所降低,且下降幅度与柱区掺杂浓度有较大关系。器件正向导通时的电流输运模式受柱区掺杂浓度和FS层掺浓度影响,存在单极和双极输运模式櫮结果表明,在正向饱和导通压降为1.6V时,SJ-IGBT器件的关断功耗较FS-IGBT器件降低了约39.96%。因此,超结结构能够有效改善器件性能。第二,分析了半超结IGBT(Semi SJ-IGBT)器件特性。结果表明,随着柱区厚度的增加,器件击穿电压也随之增加。同时,器件导通压降易受柱区掺杂浓度的影响。为了降低Semi SJ-IGBT的导通压降,研究了具有N阻挡层的Semi SJ-IGBT器件特性。结果表明,N阻挡层g彟起到有效降低器件导通压降的作用。第三,在Semi SJ-IGBT结构基础上,提出了一种带电子抽取通道的新型Semi SJ-IGBT结构。该结构底部具有一个NPN三极管,在器件关断过程中,NPN三极管能够为电子载流子提供抽取通道,提高了器件的关断速度,从而实现降低关断功耗的目的。结果表明,在正向饱和导通压降为1.25V时,新型器件的关断功耗较Semi SJ-IGBT器件降低了约40.03%。因此,器件性能够得到有效改善。第四,在Semi SJ-IGBT结构基础上,又提出了一种具有N掺杂条的新型Semi SJ-IGBT结构。该结构通过在P+集电区内引入N型掺杂条,调节集电极空穴注入效率,从而降低H件的关断时间。结果表明,在正向饱和导通压降为1.25 V时,相比于Semi SJ-IGBT器件,新型器件的关断功耗阐氏了约37.03%。因此,器件性能也能得到有效改善。
[Abstract]:Insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) as the field of power electronics in the 'typical switching device with high input impedance, conduction voltage, driving advantages of small power, the switching power supply, household appliances, rail transportation and other fields are playing an increasingly important role. However, the traditional IGBT there is conduction voltage drop and turn off the contradiction between power. How to effectively improve the tradeoff between device turn-on voltage drop and turn off power is always a difficult problem in IGBT design. In order to solve this problem, based on IGBT theory, through the introduction of the device in the drift region of super junction (Super Junction SJ) structure, purpose to further improve the comprehensive performance of IGBT. The SJ-IGBT device is simulated and Tron systematically using Medici TCAD software, the specific contents are as follows: first, analyzes the working principle of SJ-IGBT device Study on the column width, thickness, doping concentration, influence of static and dynamic characteristics of the device. When the P column and N column to keep the charge balance, the breakdown voltage characteristics is better than that of FS-IGBT. when the P column and N column charge imbalance, the breakdown voltage will decrease, and the decreased amplitude has great relationship with column area doping the concentration of positive conduction current of the device. The transport model of column doping concentration and FS layer doping concentration, existence of unipolar and bipolar transport mode E results show that the positive saturation voltage drop is 1.6V, SJ-IGBT device shutdown power consumption is reduced by about 39.96%. so that the FS-IGBT device, super junction structure can to effectively improve the performance of the device. Second, analysis of the semi super junction IGBT (Semi SJ-IGBT) device characteristics. The results show that with the increase of the thickness of the column, the breakdown voltage is increased. At the same time, the device turn-on voltage drop is easily affected by the doping concentration of the column. The lower Semi SJ-IGBT conduction drop, were studied with Semi SJ-IGBT device characteristics of N barrier layer. The results show that the N barrier g Yue play an effective role in reducing device conduction drop. Third, based on Semi SJ-IGBT structure, this paper presents a novel Semi SJ-IGBT structure with the electron extraction channel. The bottom of the structure has a NPN transistor in turn off process, NPN transistor can provide channels for the extraction of electron carriers, raise the turn off speed of devices, to reduce the shutdown power consumption. The results showed that the positive saturation voltage drop is 1.25V, the new device power consumption is off the Semi SJ-IGBT device is reduced by about 40.03%. so the device can be effectively improved. Fourth, based on Semi SJ-IGBT structure, and proposes a new Semi with SJ-IGBT structure. The structure of the N doped by P+ in the collector region The introduction of N type doping, adjusting the injection efficiency of the collector cavity, thereby reducing the off time of H. The results showed that the positive saturation voltage drop is 1.25 V, compared to Semi SJ-IGBT devices, new devices shut off the power's interpretation about 37.03%. so the device performance can be effectively improved.

【学位授予单位】：西南交通大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN322.8

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