电解质调控场效应晶体管及其人造突触器件应用

发布时间：2018-01-07 16:02

本文关键词：电解质调控场效应晶体管及其人造突触器件应用　出处：《中国材料进展》2017年10期 　论文类型：期刊论文

【摘要】：类脑神经形态工程近年来正在成为信息领域的一个研究热点,将成为今后人工智能发展的有力补充和增长点,促进微电子技术的发展。人脑中有~10~(11)个神经元和~10~(15)个突触连接,突触结构是神经元间发生信息传递的关键部位,是人脑认知行为的基本单元,得益于超大量的并行突触计算,人脑的计算模式非常可靠,因此研制人造突触器件对于神经形态工程而言具有重要的意义。目前,国际上有关人造突触器件的研究才刚刚起步,最新研究成果不断涌现,正在成为人工智能和神经形态领域的一个重要分支,将为今后人工智能的发展注入新的活力。离子导体电解质具有独特的离子/电子界面耦合特性,其在静电调控器件中有着独特的应用价值,为揭示凝聚态物质的新规律提供了新的途径,并且由于独特的界面离子耦合特性及相关的界面电化学过程,其在人造突触器件和神经形态系统方面有着极强的应用前景。
[Abstract]:Brain neuronal morphologic engineering is becoming a research hotspot in the field of information in recent years, which will be a powerful supplement and growth point for the development of artificial intelligence in the future. In order to promote the development of microelectronic technology, there are 11 neurons and 15 synapses in the human brain. The synaptic structure is the key site for the transmission of information between neurons. Human brain is the basic unit of cognitive behavior, thanks to a large number of parallel synaptic computing, the human brain computing model is very reliable, so the development of artificial synaptic devices for neural morphological engineering is of great significance. The research on artificial synaptic devices has just started in the world, and the latest research results are emerging constantly, which is becoming an important branch of artificial intelligence and neural morphology. Ion conductor electrolytes have unique ion / electronic interface coupling characteristics and have unique application value in electrostatic control devices. It provides a new way to reveal the new law of condensed matter, and because of the unique interface ion coupling characteristics and related interfacial electrochemical processes. It has a strong application prospect in artificial synaptic devices and neural morphological systems.
【作者单位】：中国科学院宁波材料技术与工程研究所浙江省石墨烯应用研究重点实验室;中国科学院大学;
【基金】：宁波市科技创新团队项目(2016B10005) 浙江省自然科学基金资助项目(LR18F040002) 中科院青年创新促进会(2014259),中科院交叉创新团队项目
【分类号】：TN386
【正文快照】： 1前言过去几十年来,半导体工业遵循了摩尔定律不断向前发展,其中一个重要特点就是器件的微型化。然而,传统硅基CMOS器件通常采用热氧化Si O2或Si Nx作为栅介质,受限于这类栅介质的物性和电性,器件微型化面临着物理极限问题,采用高介电常数栅介质(高k)可以在一定程度上克服这一

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