智能功率驱动芯片用SOI-FRD反向恢复特性的研究与优化

发布时间：2018-01-07 20:01

本文关键词：智能功率驱动芯片用SOI-FRD反向恢复特性的研究与优化　出处：《东南大学》2016年硕士论文　论文类型：学位论文

【摘要】：近些年来,智能功率驱动芯片因为自身高效率和高可靠性的优点得到越来越多的关注。在智能功率驱动芯片中,快恢复二极管(FRD)主要作为横向绝缘栅双极型晶体管(LIGBT)的续流二极管使用,快恢复二极管的特性特别是其反向恢复特性对整个智能功率驱动芯片的功耗和可靠性有着重要的影响。目前国内对快恢复二极管的研究多针对于纵向结构的耐压特性,对SOI-FRD结构及其反向恢复特性关注较少。因此,迫切需要对SOI-FRD的反向恢复特性进行优化,这对我国自主研发智能功率驱动芯片具有重要意义。本文首先调研了国内外FRD的研究现状以及常用技术,详细分析了FRD的反向恢复特性对功率开关管LIGBT以及智能功率驱动芯片的影响。然后从理论和仿真两个方面探究影响FRD反向恢复特性的因素,并通过建立二极管反向恢复解析模型,本文提出了一种新型PT-IDDOT快恢复二极管结构。新结构一方面通过在器件漂移区中制备两个非对称深沟槽以提高器件耐压,从而缩短漂移区长度,有效降低了器件的反向恢复时间,提高了器件的开关速度。另一方面,在反向恢复过程中,两个深沟槽之间的间隙会捕获少数载流子,同时深沟槽之间的Ptop层会电离出少数载流子,保证有足够的少数载流子维持器件的反向恢复过程,提高了器件的反向恢复软度。利用功率半导体器件仿真软件Sentaurus TCAD对PT-IDDOT快恢复二极管的特性进行仿真,仿真结果显示PT-IDDOT快恢复二极管的反向恢复时间为69ns,与传统结构相比降低了37.5%。在0.5gm的S0I工艺平台上进行流片,流片测试结果表明PT-IDDOT结构的反向恢复时间为150ns,与同类产品相比降低了约25%。
[Abstract]:In recent years, the intelligent power chip because of its high efficiency and high reliability has been more and more attention. In the smart power chip, fast recovery diode (FRD) as the main lateral insulated gate bipolar transistor (LIGBT) of the freewheeling diode, fast recovery diode characteristics especially has an important influence on the the reverse recovery characteristics of the intelligent power chip power consumption and reliability. At present the fast recovery diode research for the breakdown characteristics of the vertical structure and the structure of SOI-FRD and its reverse recovery characteristics of less concern. Therefore, the urgent need to optimize SOI-FRD reverse recovery characteristics, the China's independent research and development of intelligent power is important driving chip. This paper research the domestic and foreign research status of FRD and commonly used technology, a detailed analysis of the reverse recovery characteristics of FRD The power switch of LIGBT and intelligent power driver chip. Then explore the influence factors of FRD reverse recovery characteristics from two aspects of theory and simulation, and through the establishment of diode reverse recovery analytical model, this paper presents a new PT-IDDOT fast recovery diode structure. A new structure in the drift region in the preparation of two the asymmetric deep trench to improve the breakdown voltage of the device, so as to shorten the length of the drift region, the device effectively reduces the reverse recovery time, improve the switching speed of the device. On the other hand, in the reverse recovery process, the gap between the two deep trench will capture the minority carrier at the same time, the Ptop layer between the deep trench will produce a few the carrier, to ensure that there is sufficient to maintain the minority carrier devices reverse recovery process, improve device reverse recovery softness. The use of power semiconductor device simulation software Sentaur The characteristics of us TCAD on PT-IDDOT fast recovery diode is simulated. The simulation results show that the reverse PT-IDDOT fast recovery diode recovery time is 69ns, comparing with the traditional structure reduces the 37.5%. S0I platform is taped out in 0.5gm process, the test results show that the PT-IDDOT structure of the reverse recovery time 150ns, compared with similar products is reduced by about 25%.

【学位授予单位】：东南大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN31

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