当前位置:主页 > 科技论文 > 电子信息论文 >

基于硅微通道板的钴系电活性材料析氢反应研究

发布时间:2018-01-08 10:26

  本文关键词:基于硅微通道板的钴系电活性材料析氢反应研究 出处:《华东师范大学》2017年硕士论文 论文类型:学位论文


  更多相关文章: 硅微通道板 宏孔导电网络 氢氧化钴 狼牙棒状纳米棒 析氢反应 电催化


【摘要】:硅微通道板(SiliconMicrochannel Plates:SiMCPs)具有高深宽比和大比表面积这两个优点,是作为三维催化电极理想的基底层,在析氢反应(HER)方面的应用前景极其广阔。对硅衬底进行一系列MEMS工艺进行处理得到标准的硅微通道板(方孔尺寸为5μm×5μm,深度为250μm)。首先,利用液流法在硅微通道板(SiMCPs)孔道内侧壁上沉积钴镍磷(CoNiP)合金材料(CoNiP/SiMCPs),制备了钴镍磷微米管阵列。比较了液流沉积与真空化学沉积两种工艺方法,验证了液流法对于SiMCPs化学沉积的优化。其次,对CoNiP/SiMCPs在碱性电解液环境中的电化学特性进行了研究。CoNiP/SiMCPs催化电极具有高效的析氢反应(HER)催化活性。在搅拌速度为550 r/min时,电极的过电位为229 mV对应的电流密度为20 mA cm-2。在lmol L-1的KOH中,当搅拌速度从0提高到550r/min,催化电极极化曲线的塔菲尔斜率为139.2-98.8 mV dec-1。相比于二维结构的CoNiP/Si,三维非晶结构的CoNiP/SiMCPs具有更优良的HER催化性能。非贵重过渡金属钴的氢氧化物电催化剂的合成是一个重要的前沿课题。进一步的,我们在前面的硅微通道板的基础上,利用液流淀积法形成宏孔导电网络(MECN),利用水热法成功合成三维狼牙棒状的氢氧化钴纳米棒状催化电极。这个独特的架构是一种具有高深宽比的三维阵列结构,能提供极大地有效面积,同时能在催化电化学反应的电极与电解液界面处暴露出更多的活性点。我们分别与以MECN为基底的氢氧化钴纳米片和泡沫状的氢氧化钴做了全面的对比,发现我们合成的架构展现了更加高效的HER的催化性能。催化电极电流密度为10 mAcm-2的情况下,存在较低的过电位为-69.2mVvs.RHE,塔菲尔斜率为61.9 mVdec-1。这种三维催化电极存在高电流密度以及稳定的催化活性,使得其在析氢反应上具有广泛的应用前景。
[Abstract]:The silicon micro channel plate (SiliconMicrochannel Plates:SiMCPs) with high aspect ratio and large surface area of these two advantages, as the basal layer of three-dimensional electrode ideal, in the hydrogen evolution reaction (HER) application is extremely broad. In a series of MEMS process to obtain standard silicon microchannel plate on the silicon substrate (square hole size of 5 m * 5 m and a depth of 250 mu m). First of all, in the micro channel flow method using liquid (SiMCPs) on the inner wall of pore deposition of cobalt nickel phosphorus alloy material (CoNiP) (CoNiP/SiMCPs), co-ni-p microtube arrays were prepared. The liquid flow vacuum deposition and chemical deposition process of two kinds of methods to verify the optimization for SiMCPs chemical deposition liquid flow method. Secondly, the electrochemical properties of CoNiP/SiMCPs in alkaline electrolyte environment is studied in the.CoNiP/SiMCPs catalytic electrode with hydrogen evolution reaction (HER), the catalytic activity in the mixing. The speed is 550 r/min, the over potential of electrode as the current density of 229 mV corresponding to 20 mA cm-2. in lmol L-1 KOH, when the stirring speed is increased from 0 to 550r/min, Tafel slope catalytic electrode polarization curves for 139.2-98.8 mV dec-1. compared to the two-dimensional structure of CoNiP/Si three-dimensional amorphous structure CoNiP/SiMCPs with HER catalyst more excellent performance of non precious catalysts. The synthesis of transition metal hydroxide cobalt is an important research topic. Further, we in front of the silicon micro channel plate on the formation of macro pore fluid deposition method using conductive network (MECN), cobalt hydroxide nanorods catalytic electrodes by hydrothermal method the successful synthesis of 3D Langya rod. This unique architecture is a three-dimensional array structure with high aspect ratio, can provide extremely effective area, while the electrode and electrolyte in electrochemical catalytic reaction The interface exposes more active sites. We respectively with MECN as cobalt hydroxide nano substrate and foam like cobalt hydroxide to do a comprehensive comparison, we found that the synthesis of architecture show the catalytic performance of more efficient HER. Catalytic electrode current density of 10 mAcm-2 under the condition that the existence of potential too low for -69.2mVvs.RHE Tafel, a slope of 61.9 mVdec-1. this three-dimensional catalytic electrode current density and has high catalytic activity and stability, which has wide application prospect in the hydrogen evolution reaction on it.

【学位授予单位】:华东师范大学
【学位级别】:硕士
【学位授予年份】:2017
【分类号】:TN303

【参考文献】

相关期刊论文 前5条

1 连柯楠;童新;付梦秋;谭人玮;徐少辉;朱一平;熊大元;赵振杰;王连卫;;基于硅微通道板的NiFeP磁微米线阵列制备及软磁性能[J];微纳电子技术;2016年12期

2 付梦秋;连柯楠;童新;谭人玮;赵振杰;徐少辉;朱一平;熊大元;王连卫;;硅微通道板电沉积Fe-Ni微米线阵列结构及磁性能[J];微纳电子技术;2016年12期

3 童新;连柯楠;付梦秋;谭人玮;赵振杰;熊大元;徐少辉;朱一平;王连卫;;基于硅微通道板的CoNiP微米管阵列的磁性[J];微纳电子技术;2016年11期

4 王国政;陈立;秦旭磊;王蓟;王洋;付申成;端木庆铎;;Influence of etching current density on the morphology of macroporous silicon arrays by photo-electrochemical etching[J];半导体学报;2010年07期

5 李卫;徐岭;孙萍;赵伟明;黄信凡;徐骏;陈坤基;;基于直接胶体晶体刻蚀技术的高度有序纳米硅阵列的尺寸及形貌控制[J];物理学报;2007年07期



本文编号:1396743

资料下载
论文发表

本文链接:https://www.wllwen.com/kejilunwen/dianzigongchenglunwen/1396743.html


Copyright(c)文论论文网All Rights Reserved | 网站地图 |

版权申明:资料由用户06e61***提供,本站仅收录摘要或目录,作者需要删除请E-mail邮箱bigeng88@qq.com