超高压4H-SiC p-IGBT器件材料CVD外延生长

发布时间：2018-01-08 11:31

本文关键词：超高压4H-SiC p-IGBT器件材料CVD外延生长　出处：《电力电子技术》2017年08期 　论文类型：期刊论文

【摘要】：介绍偏晶向4H-SiC衬底上化学气相沉积(CVD)外延生长及其竞位掺杂方法,使用"热壁"CVD外延生长系统,在4英寸4°偏角n~+型4H-SiC衬底上进行了p型4H-SiC外延层及p型绝缘栅双极型晶体管(p-IGBT)器件用p~-n~+结构材料生长,利用Candela CS920表征了100μm厚p型4H-SiC外延层表面缺陷及结构缺陷,典型表面缺陷为三角形缺陷和胡萝卜缺陷,3种结构缺陷分别是基晶面位错(BPD)、三角形肖克利型层错(SSF)和条形层错(BSF)。微波光电导衰退法(μ-PCD)测试表明,100μm厚p型4H-SiC外延层载流子寿命为2.29μs,采用二次离子质谱(SIMS)测试方法分析了不同铝(Al)掺杂浓度的深度分布,最高Al掺杂浓度为2×10~(19)cm~(-3)。
[Abstract]:This paper introduces the epitaxial growth and its doping method of chemical vapor deposition (CVD) on monotectic 4H-SiC substrates. The "hot-wall" CVD epitaxial growth system is used. P-type 4H-SiC epitaxial layer and p-type insulated gate bipolar transistor (p-IGBT) were fabricated on 4in 4 掳bias n- type 4H-SiC substrate. The device is grown with pn-n~ structure material. The surface defects and structural defects of 100m thick p-type 4H-SiC epitaxial layer were characterized by Candela CS920. The typical surface defects were triangle defects and carrot defects. The three structural defects are basal plane dislocation (BPD), triangular Shockley stacking fault (SSF) and stripe stacking fault (BSF). The carrier lifetime of 100 渭 m thick p-type 4H-SiC epitaxial layer is 2.29 渭 s. The depth distribution of different Al doped concentration is analyzed by secondary ion mass spectrometry (SIMS). The highest Al doping concentration is 2 脳 10 ~ (10) C ~ (19) C ~ (-1) C ~ (-1).
【作者单位】：东莞市天域半导体科技有限公司;中国科学院半导体研究所;
【基金】：国家重点研发计划(2016YFB0400402,2016YFB-0400901)~~
【分类号】：TN322.8
【正文快照】： l引言传统Si功率半导体性能己接近其理论极限,功率性能无提升空间。SiC半导体材料以其独特的优异性能,如禁带宽度大、临界雪崩击穿电场高、热导率高等,受到广泛关注。因此使用SiC半导体材料可制造与Si半导体类型及结构相同的功率器件,特别是性能更加突出的高压/超高压M0SFETW

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