采用纳米银焊膏烧结互连技术的中高压IGBT模块及其性能表征

发布时间：2018-01-10 01:01

本文关键词：采用纳米银焊膏烧结互连技术的中高压IGBT模块及其性能表征　出处：《高电压技术》2017年10期 　论文类型：期刊论文

【摘要】：智能电网用压接式绝缘栅双极型晶体管(IGBT)模块主要通过压力接触来实现热耗散,而这种封装散热方式存在界面接触不佳、散热性能差等缺点,导致同等通流能力下芯片的结温偏高,电性能下降,甚至影响其长期可靠性。为了克服这些问题,提出了采用纳米银焊膏作为芯片连接材料替代压力接触与芯片形成电触点的方式,研发了一款针对智能电网的采用纳米银焊膏的烧结式IGBT模块;并表征了烧结式IGBT模块的整体热阻、静态电性能及芯片剪切强度,完成了与商用同等级压接式IGBT模块的性能比对。实验结果显示:烧结式IGBT模块的热阻比压接式IGBT模块下降了15.8%;2种模块的静态电性能的测试结果基本一致,进一步验证了烧结式IGBT模块的封装可行性;对于大面积IGBT芯片(尺寸为13.5 mm×13.5 mm),其连接芯片烧结银接头的剪切强度约为20 MPa,接头质量较高。以上结果说明采用纳米银焊膏封装高压IGBT模块,不仅可以显著降低压接IGBT模块的热阻,同时仍能获得良好的静态电性能。因此,由于其在高压大电流电能运输过程中较高的转换效率及功率密度,烧结式IGBT模块有望应用于智能电网。
[Abstract]:The IGBT module of voltage insulated gate bipolar transistor used in smart grid is mainly used to realize heat dissipation through pressure contact. However, this packaging heat dissipation mode has some shortcomings such as poor interface contact, poor heat dissipation performance and so on. In order to overcome these problems, the junction temperature of the chip is high, the electrical performance is decreased, and the long-term reliability of the chip is even affected under the same current capacity. The method of using nano-silver solder paste as chip connection material instead of pressure contact and forming electric contact point is put forward. A sintered IGBT module using nano-silver solder paste for smart grid is developed. The whole thermal resistance, static electrical properties and chip shear strength of sintered IGBT modules were also characterized. The experimental results show that the thermal resistance specific pressure connection IGBT module of the sintered IGBT module has decreased 15.8; The static electrical performance of the two modules is basically the same, which further verifies the packaging feasibility of the sintered IGBT module. For a large area IGBT chip (13.5 mm 脳 13.5 mm), the shear strength of the sintered silver joint is about 20 MPa. The results show that using nano-silver solder paste to encapsulate high-voltage IGBT module can not only significantly reduce the thermal resistance of the IGBT module, but also obtain good static electrical properties. Because of its high conversion efficiency and power density in the process of high-voltage and high-current power transportation, the sintered IGBT module is expected to be used in smart grid.
【作者单位】：天津大学材料科学与工程学院;中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室;全球能源互联网研究院;
【基金】：国家高技术研究发展计划(863计划)(2015AA034501) 国家自然科学基金(61334010) 天津市科技支撑计划(13ZCZDGX01106) 瞬态光学与光子技术国家重点实验室开放课题(SKLST201607)~~
【分类号】：TN322.8
【正文快照】： Medium and High Voltage IGBT Module Using Nanosilver Paste Sintering Technologyand Its Performance CharacterizationMEI Yunhui1,2,FENG Jingjing1,WANG Xiaomin1,LU Guoquan1,ZHANG Peng3,LIN Zhongkang3(1.School of Materials Science and Engineering,Tianjin Uni

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