静电感应晶体管的研究与仿真

发布时间：2018-01-10 17:09

本文关键词：静电感应晶体管的研究与仿真　出处：《兰州交通大学》2015年硕士论文　论文类型：学位论文

【摘要】：随着高新技术的发展和人们对高品质生活条件的追求,导致电力半导体器件的更新换代越来越快,而其研发周期通常包括理论研究、产品试验和批量生产三个环节,所以对于提高产品试验成功率、缩短产品推向市场的时间来说,成熟的理论研究和基于软件的辅助设计至关重要。目前,静电感应晶体管作为新型半导体器件的一种,理论研究滞后于实践过程,且利用计算机辅助研究也不多见。因此,本文通过半导体仿真软件Silvaco Tcad对器件进行仿真模拟,达到对器件工作的物理机理解释和器件结构的关键参数优化的目的。论文研究工作主要包括四个方面:一是论述静电感应晶体管的结构种类、工作机理。在此基础上,从性能相似性和原理代表性两个方面分析确定了本文的研究结构为基于硅的表面栅型静电感应晶体管。二是从Silvaco Tcad仿真软件入手,建立了器件仿真模型。首先简单对半导体仿真软件做了介绍;其次以材料硅为衬底材料,针对本文研究的基于硅平面栅静电感应晶体管器件,从基本方程、材料特性、界面特性、物理模型、离化模型、边界条件等方面对器件模拟方法做了定义。三是从工艺角度入手,对器件的研制过程进行了工艺仿真。以软件工艺仿真模块Athene为模拟平台,从生成氧化层、扩散和离子注入杂质、光刻等工艺进行了模拟仿真;重点是通过对比分析,选用了横向扩散小、结深相对精确的离子注入栅代替传统的扩散法,源极区采用快退火形成杂质的二次分布和消除晶格损伤。四是从器件仿真入手,对影响器件电学性能的关键结构参数进行了分析。这个过程是基于软件电学仿真模块Atlas进行的。一方面仿真分析了器件类五极管饱和特性曲线和类三极管不饱和特性曲线,并通过改变反偏栅压和漏偏压,分析沟道势垒形成机理;另一方面对影响器件伏安特性曲线的关键结构参数进行了仿真分析,确定了器件各电学性能参数对器件沟道长宽、源极区参数、漂移层参数的相互依赖关系,从而得到所需器件性能所对应的最优器件结构参数,为器件工艺实践起到了理论指导作用。
[Abstract]:With the development of high technology and people's pursuit of high quality life conditions, resulting in power semiconductor devices update more quickly, and the development cycle usually includes theoretical research, product test and batch production of three links, so to improve the success rate of product testing, shorten product time to market, mature theoretical research and based on the auxiliary software design is very important. At present, the static induction transistor as a new type of semiconductor devices, theoretical research lags behind the practice process, and the use of computer aided research is rare. Therefore, this paper carries on the simulation of semiconductor devices by simulation software Silvaco Tcad, to explain physical mechanism and device structure of the device. The key parameter optimization. The research work mainly includes four aspects: one is to discuss the structure of static induction transistor Type of work mechanism. On this basis, from two aspects of the performance of similar principle and representative analysis determine the structure of this paper is the surface gate static induction transistor based on silicon. The two is to start from the Silvaco Tcad simulation software, established simulation model. Firstly, the semiconductor simulation software is introduced; secondly with the material of silicon as the substrate, the silicon surface gate static induction transistor device based on this research, from the basic equations, material properties, interface properties, physical model, ionization model, boundary conditions and so on device simulation methods have been defined. Three is to start from the point of view of technology, the development process of the devices were process simulation. Simulation software to process module Athene as the simulation platform, from the oxide layer, the impurity diffusion and ion implantation, lithography processes were simulated; the focus is through comparative analysis, choose With the lateral diffusion of small, relatively accurate junction depth of ion implantation diffusion method instead of the traditional gate, a source region formed by fast annealing two impurity distribution and elimination of lattice damage. Four is starting from the device simulation, the key structure parameters affecting the electrical properties were analyzed. The process is the software of electrical simulation module Atlas based on the simulation analysis. On the one hand the device class pentode saturation curve and triode saturation curve, and by changing the reverse gate voltage and drain bias, analysis channel barrier formation mechanism; on the other hand the key effect of the structure of device of volt ampere characteristic curve parameters are simulated and analyzed, determine the device the electrical parameters of the device channel length, source parameters, interdependence drift layer parameters, thus the optimal structure parameters required for the performance of the device, device The practice of part process has played a theoretical guiding role.

【学位授予单位】：兰州交通大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN32

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