基于喷墨打印有机场效应晶体管器件性能研究

发布时间：2018-01-11 06:01

本文关键词：基于喷墨打印有机场效应晶体管器件性能研究　出处：《南京邮电大学》2016年硕士论文　论文类型：学位论文

【摘要】：喷墨印刷是一种很有前途的技术,与其他溶液法相比它可以节省材料,并且可以直写图案化,有利于促进柔性有机薄膜晶体管(OTFTs)制造和商业化。本论文通过研究喷墨打印的条件,基于界面修饰,对场效应晶体管性能的提高进行研究,通过优化工艺条件,综合对比打印与旋涂的器件性能,本论文分为以下三个方面:1.主要工作是通过使用Dimatix-3000喷墨打印设备完成对于纳米银电极层的制备,通过研究不同参数,包括基板温度,打印层数,打印点间距对于银(Ag)电极在二氧化硅(SiO2)和玻璃基板表面成膜的影响,以得到无咖啡环效应的打印条件及打印银电极形貌,为制备有机场效应晶体管做了前期的准备工作。2.基于并五苯材料,研究不同基板表面处理的器件性能,通过优化绝缘层与半导体表面,得到高性能的OFET器件,结合1部分的研究,对比打印出有无咖啡环效应银电极做源漏电极相比有咖啡环效应电极对器件性能要相对提高。3.结合2基板表面修饰的结果,基于P3HT制备场效应晶体管,通过喷墨打印与旋涂对比器件电学特征。通过优化工艺条件,使喷墨打印的器件的性能与旋涂在一个数量级。并进一步研究对源漏电极进行修饰后,降低了接触电阻和提高了薄膜质量来提高器件的性能。
[Abstract]:Inkjet printing is a promising technique, it can save material compared with other solution method, and can direct write patterning, is conducive to the promotion of flexible organic thin film transistor (OTFTs) manufacturing and commercialization. Through the research of ink-jet printing conditions, interface modification based on field effect transistor performance to improve, through the optimization of the process conditions, the comprehensive performance of the device between print and spin coating, this paper is divided into the following three aspects: 1. the main work is for the nano silver electrode layer was prepared by using Dimatix-3000 inkjet printing equipment, through the study of different parameters, including substrate temperature, printing layer, print point spacing for silver (Ag) electrode in silica (SiO2) and film glass substrate surface, to print the unconditional coffee ring effect and printing silver electrode morphology for the preparation of organic field-effect transistors do The preparatory work based on.2. and five benzene materials, research of device performance of different substrate surface treatment, insulation layer and the semiconductor surface by optimizing OFET devices with high performance, combined with the 1 part of the study, compared to print out a free coffee ring effect of silver electrode as source and drain electrode compared with the coffee ring effect on device to improve the performance of.3. with 2 relative substrate surface modification, preparation of P3HT field effect transistor based on the spin coating and ink-jet printing device. Comparison of electrical characteristics by optimizing the process conditions and performance of the device and spin coated ink-jet printing of an order of magnitude. And further research on the source and drain electrodes were modified to reduce the contact resistance and improve the quality of the films to improve the performance of the device.

【学位授予单位】：南京邮电大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN386

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