氮气流量对磁控溅射AlN薄膜光学性能的影响

发布时间：2018-01-11 13:06

本文关键词：氮气流量对磁控溅射AlN薄膜光学性能的影响　出处：《半导体技术》2017年01期 　论文类型：期刊论文

【摘要】：Al N薄膜因其具有优异的物理化学性能而有着广阔的应用前景,采用反应磁控溅射法在低温条件下制备AlN薄膜是近些年科研工作的热点。采用直流磁控溅射法,于室温下通入不同流量的氮气在p型硅(100)和载玻片衬底上沉积了AlN薄膜。利用傅里叶变换红外(FTIR)光谱仪、X射线衍射仪(XRD)、扫描电子显微镜(SEM)和分光光度计等分析薄膜的组分、结构、形貌和光学性能。结果表明随着氮气流量的增加,Al N薄膜质量变好,N2流量为8 cm3/min时制备的AlN薄膜为六方纤锌矿结构,在680 cm~(-1)处具有明显的FTIR吸收峰,进一步说明成功制备了AlN薄膜。在300~900 nm的波长范围内,薄膜透过率最高可达94%;薄膜带隙随着氮气流量的增加而增大,最大带隙约为4.04 eV。
[Abstract]:Al N thin films have a wide application prospect because of their excellent physical and chemical properties. The preparation of AlN thin films by reactive magnetron sputtering at low temperature is a hot topic in recent years. DC magnetron sputtering method is used. AlN thin films were deposited on p-type silicon (100) and glass substrates at room temperature with different flow rates of nitrogen. Fourier transform infrared (FTIR) spectrometer and X-ray diffractometer (XRD) were used. Scanning electron microscopy (SEM) and spectrophotometer were used to analyze the composition, structure, morphology and optical properties of the films. The results showed that the quality of Al N films improved with the increase of nitrogen flow rate. The AlN thin films prepared with N _ 2 flow rate of 8 cm3/min have hexagonal wurtzite structure and have obvious FTIR absorption peak at 680 cm ~ (-1). It is further demonstrated that the AlN thin films have been successfully prepared. The highest transmittance of the AlN films can reach 94 nm in the wavelength range of 300nm. The band gap increases with the increase of nitrogen flow rate, and the maximum band gap is about 4.04 EV.
【作者单位】：南京航空航天大学材料科学与技术学院;江苏省能量转换材料与技术重点实验室;
【基金】：国家自然科学基金资助项目(61176062) 江苏省前瞻性联合创新资助项目(BY2013003-08) 江苏高校优势学科建设工程资助项目中央高校基本科研业务费资助项目(3082015NJ20150024)
【分类号】：TN304.23;TB383.2
【正文快照】： 0引言氮化铝(Al N)是一种宽能隙(6.2 e V)直接带隙结构的Ⅲ-Ⅴ族化合物半导体材料[1],具有高电阻率、高击穿场强(10 k V/m)、高热导率(3.2 W/(cm·K))、高化学稳定性和热稳定性以及良好的光学和力学性能[2],这些优异的物理化学性能使Al N薄膜在电学、热学、光电领域有广阔的应

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