MOCVD反应室流场分析及其对GaN生长的影响

发布时间：2018-01-12 21:17

本文关键词：MOCVD反应室流场分析及其对GaN生长的影响　出处：《西安电子科技大学学报》2017年01期 　论文类型：期刊论文

【摘要】：为了优化设计金属有机[化合物]CVD反应室,以生长出高质量的GaN材料,对一种垂直喷淋式金属有机[化合物]CVD系统中生长GaN材料的生长过程进行了模拟.模拟结果表明,反应室中衬底石墨基座的旋转速度和反应室的高度对GaN生长过程中的气相传输过程和材料质量均有影响.随着基座旋转速度的升高,反应室内部的流场分布趋向均匀,衬底表面的气体流速变快,GaN生长速率升高,并且厚度均匀性也变好,但是速度超过一定限度后会使生长速率降低;在同样的生长条件下,反应室的高度越高,反应室内部的流场分布越均匀,这有利于提高材料的均匀性,同时GaN生长速率先降低后升高,但气相传输中的气相预反应会逐渐增强.
[Abstract]:In order to optimize the design of metal and organic. [Compounds] CVD reaction chamber to grow high quality GaN materials, a vertical spray metal-organic. [The growth process of GaN materials in compound] CVD system was simulated. The rotation rate of the substrate graphite base and the height of the reaction chamber have an effect on the gas phase transport process and the material quality during the growth of GaN. The flow field in the reaction chamber tends to be uniform, the gas flow rate on the substrate surface increases rapidly and the thickness uniformity increases, but when the velocity exceeds a certain limit, the growth rate decreases. Under the same growth conditions, the higher the height of the reaction chamber, the more uniform the flow field distribution in the reaction chamber, which is conducive to improve the homogeneity of the material, while the growth rate of GaN decreases first and then increases. However, the gas phase prereaction in gas phase transport will gradually increase.
【作者单位】：西安电子科技大学机电工程学院;西安电子科技大学微电子学院;
【基金】：国家自然科学基金资助项目(61334002) 国家重大科技专项资助项目(2011ZX01002-001)
【分类号】：TN304
【正文快照】： GaN是重要的宽带隙半导体材料,在光电器件、高功率器件等众多领域有着广泛的应用.金属有机[化合物]CVD(Metal Organic Chemical Vapor Deposition,MOCVD)方法是制备GaN材料的主要手段之一.在金属有机[化合物]CVD系统中进行GaN材料的生长,各种生长参数以及金属有机[化合物]CVD

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