一种MTM反熔丝器件的击穿特性

发布时间：2018-01-13 08:08

本文关键词：一种MTM反熔丝器件的击穿特性　出处：《微纳电子技术》2017年05期 　论文类型：期刊论文

【摘要】：制备了一种基于高介电常数材料氧化铪(HfO2)薄膜作为核心绝缘介质层的金属-金属(MTM)反熔丝单元结构。基于此结构,使用钛(Ti)和氮化钛(TiN)分别作为MTM反熔丝结构中的过渡层和阻挡层,得到了致密、均匀、无针孔缺陷以及上下电极接触良好的反熔丝单元。讨论了反熔丝单元的击穿过程及击穿现象,并重点研究了该结构的击穿特性和时变击穿(TDDB)特性。研究结果表明,此结构不仅具有良好的工艺一致性和较低的击穿电压(4.3 V),并且工作电压(1.8 V)下的时变击穿时间超过13年。其结构可以进一步应用于反熔丝型现场可编程逻辑阵列(FPGA)的互连结构。
[Abstract]:Based on the high dielectric constant material hafnium oxide HfO _ 2) thin film as the core insulating dielectric layer, a metal-metal MTM anti-fuse unit structure was prepared based on this structure. TiN and TiN) were used as the transition layer and barrier layer of MTM antifuse structure respectively, and the density and uniformity were obtained. The breakdown process and breakdown phenomenon of the anti-fuse unit with no pinhole defects and good contact between upper and lower electrodes are discussed. The breakdown characteristics and time-varying breakdown characteristics of the structure are mainly studied. The results show that the structure not only has good process consistency and low breakdown voltage (4.3 V). The time-varying breakdown time is more than 13 years under the operating voltage of 1.8 V, and its structure can be further applied to the interconnection structure of the anti-fuse field programmable logic array (FPGA).
【作者单位】：中国科学院微电子研究所;中国科学院大学;
【分类号】：TN389
【正文快照】： 0引言现场可编程逻辑阵列(FPGA)已被广泛应用于通信、控制和航天等领域。其中,反熔丝型FPGA因反熔丝器件特有的抗辐照和高可靠性的特点被广泛应用于航空航天领域。反熔丝型FPGA的核心结构为反熔丝单元。反熔丝单元处于反熔丝型FPGA的连接层。上层为FPGA的电源层,下层为FPGA的

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