光刻照明系统中复眼透镜的设计及公差分析

发布时间：2018-01-13 16:19

本文关键词：光刻照明系统中复眼透镜的设计及公差分析　出处：《激光与红外》2017年07期 　论文类型：期刊论文

【摘要】：在超大规模集成电路中,为了实现NA=1.35,波长193 nm处分辨率达到45 nm的目标,需要对影响光刻照明均匀性的误差源进行详细分析最终确定公差范围。复眼透镜是使光束在系统掩膜面上形成矩形均匀照明区域的关键元件。采用CODE V软件设计了复眼透镜对引起照明不均匀性的因素进行分析,结合复眼透镜组的设计方案和实际加工能力,给出X和Y向复眼曲率公差为±10%,后组曲率公差为±5%,前后组间隔公差为±50μm,位置精度偏心公差为±1μm,装配精度公差为±3μm。制定公差合理、可行,满足了浸没式光刻照明系统高均匀性、高能量利用率的要求。
[Abstract]:In VLSI, the resolution at 193 nm is 45 nm in order to achieve NAA 1.35. It is necessary to analyze in detail the error sources that affect the uniformity of lithographic illumination and finally determine the tolerance range. Compound eye lens is the key element to make the beam form a rectangular uniform illumination area on the system mask surface. CODE is adopted. V software designed the compound eye lens to analyze the factors that caused the illumination inhomogeneity. Combined with the design and practical processing ability of compound lens group, the curvature tolerance of X and Y direction compound eye is 卤10, the curvature tolerance of posterior group is 卤5 and the tolerance of anterior and posterior group interval is 卤50 渭 m. The eccentric tolerance of position accuracy is 卤1 渭 m, and the tolerance of assembly accuracy is 卤3 渭 m. The tolerance is reasonable and feasible, which meets the requirements of high uniformity and high energy utilization rate of immersion lithography lighting system.
【作者单位】：长春理工大学;长春理工大学光电信息学院;
【基金】：国家自然科学基金项目(No.91338116;No.11474037)资肋
【分类号】：TH74;TN405
【正文快照】： 1引言随着世界光刻技术迈入45 nm节点及以下,浸没式光学投影曝光光刻技术已成为集成电路制造的主流技术[1]。良好的照明均匀性能够获得高分辨率,反之,如果照明均匀性较差,那么会造成各个视场分辨率存在差异,曝光线条的粗细不一致,严重影响光刻机的性能[2-3]。故设计了NA达到1.

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