LED蓝宝石衬底抛光表面原子台阶形貌及其周期性研究

发布时间：2018-01-14 16:40

本文关键词：LED蓝宝石衬底抛光表面原子台阶形貌及其周期性研究　出处：《光学精密工程》2017年01期 　论文类型：期刊论文

【摘要】：LED蓝宝石衬底的表面质量会极大影响到后续外延质量,进而影响到LED器件性能。蓝宝石研磨片经Al2O3磨粒粗抛液、SiO2磨粒精抛液下进行化学机械抛光(CMP),最终表面经原子力显微镜(AFM)所测表面粗糙度达到0.101nm,获得亚纳米级粗糙度超光滑表面,并呈现出原子台阶形貌。同时,通过使用Zygo表面形貌仪、AFM观察蓝宝石从研磨片经Al2O3粗抛液、SiO2精抛液抛光后的表面变化,阐述蓝宝石表面原子台阶形貌的形成原因,提出蓝宝石原子级超光滑表面形成的CMP去除机理。通过控制蓝宝石抛光中的工艺条件,获得a-a型、a-b型两种不同周期规律性的台阶形貌表面,并探讨不同周期规律性台阶形貌的形成机理。
[Abstract]:The surface quality of LED sapphire substrate will greatly affect the subsequent epitaxial quality, thereby affecting the performance of LED devices. The sapphire polishing film by Al2O3 abrasive rough polishing liquid, chemical mechanical polishing of SiO2 abrasive polishing liquid (CMP), the final surface by atomic force microscope (AFM) measured by the surface roughness of 0.101nm. To obtain the nanoscale roughness of ultra smooth surface, and presents the atomic step morphology. At the same time, through the use of Zygo surface morphology, AFM observed from sapphire polishing film by Al2O3 rough polishing liquid, SiO2 polishing liquid surface changes after polishing, analyze the causes of atoms on the surface morphology of the sapphire sapphire step, ultra smooth atomic level formed on the surface of the CMP removal mechanism. By controlling the process conditions in the polishing of sapphire, a- a, B a- step surface morphology of two kinds of different cycle regularity, and discusses the different cycle regularity of step shaped morphology Mechanism.

【作者单位】：清华大学摩擦学国家重点实验室;深圳清华大学研究院深圳市微纳制造重点实验室;广东省光机电一体化重点实验室;深圳市特种功能材料重点实验室深圳大学;
【基金】：国家自然科学基金重大研究计划重点资助项目(No.91223202);国家自然科学基金创新研究群体科学基金资助项目(No.51321092) 国家重点基础研究发展计划(973计划)资助项目(No.2011CB013102) 深圳大学深圳市特种功能材料重点实验室开放基金资助项目(No.T201404)
【分类号】：TN312.8;TQ164
【正文快照】： (1.State Key Laboratory of Tribology,Tsinghua University,Beijing100084,China;2.Shenzhen Key Laboratory of Micro/Nano Manufacturing,Research Institute of Tsinghua University in Shenzhen,Shenzhen518057,China;3.Guangdong Provincial Key Laboratory of Optomec

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