光伏型InSb红外焦平面探测器的性能研究

发布时间：2018-01-14 18:44

本文关键词：光伏型InSb红外焦平面探测器的性能研究　出处：《西安电子科技大学》2015年硕士论文　论文类型：学位论文

【摘要】：近几十年来,红外焦平面探测器在航空航天、红外遥感、国防、气象、环境、医学和科学仪器等领域得到广泛的应用。InSb红外焦平面探测器作为最重要的中波段探测器之一,成为国内外的研究热点,它的发展在很大程度上提高了整个红外系统的性能。光伏型InSb红外焦平面探测器由于暗电流较小,能源消耗低等优势,被广泛应用。国内外对于光伏型InSb红外焦平面探测器研究已经很多,但是对于光伏型InSb红外焦平面探测器内部机理的研究十分少,因此掌握光伏型InSb红外焦平面探测器的内部机理具有十分重要的意义,同时探索性能更高的光伏型InSb红外焦平面探测器新结构具有十分重要的价值。本论文主要从光伏型InSb红外焦平面探测器内部机理的研究着手,对传统结构器件性能进行了系统的研究,并在对传统结构机理分析的基础上,对新型探测器结构进行了初步研究,论文主要做了如下工作:首先通过半导体器件仿真平台,对传统探测器进行建模,并对其基础性能进行了仿真分析,主要研究了探测器的结构参数,如光敏元宽度、光敏元间距、台面高度、缓冲层厚度,以及n型、p型掺杂浓度和p-n结结深等对探测器性能的影响,并通过分析探测器中电场分布、复合速率分布等与结构参数和p-n结结深等的相关性,揭示了结构参数、p-n结结深影响探测器的串音和量子效率的内在物理机制,并获得了对探测器优化设计有指导意义的研究结论。其次,通过对光伏型InSb红外焦平面探测器传统结构机理分析,得到光伏型InSb红外焦平面探测器新结构;对InSb红外焦平面探测器的新结构进行初步仿真分析,并与传统结构进行对比,结果表明新结构的性能优于传统结构的性能。同时对探测器的瞬态响应进行研究,主要研究了材料参数对探测器输出响应的影响,其中包括材料的掺杂浓度、载流子寿命以及载流子的迁移率。
[Abstract]:In recent decades, infrared focal plane detectors in aerospace, infrared remote sensing, national defense, meteorology, environment. InSb infrared focal plane detector, as one of the most important mid-band detectors, has been widely used in the field of medical and scientific instruments, and has become a research hotspot at home and abroad. Its development has greatly improved the performance of the whole infrared system. Photovoltaic InSb infrared focal plane detector has the advantages of small dark current and low energy consumption. There have been a lot of researches on photovoltaic InSb infrared focal plane detectors at home and abroad, but there are very few studies on the internal mechanism of photovoltaic InSb infrared focal plane detectors. Therefore, it is very important to master the internal mechanism of photovoltaic InSb infrared focal plane detector. At the same time, it is very important to explore the new structure of photovoltaic InSb infrared focal plane detector with higher performance. In this paper, the internal mechanism of photovoltaic InSb infrared focal plane detector is studied. On the basis of the analysis of the traditional structure mechanism, the performance of the traditional structure device is studied systematically, and the new detector structure is studied preliminarily. The main work of this paper is as follows: firstly, the traditional detector is modeled on the semiconductor device simulation platform, and its basic performance is simulated and analyzed, and the structure parameters of the detector are mainly studied. For example, Guang Min element width, Guang Min element spacing, Mesa height, buffer layer thickness, n-type p-type doping concentration and p-n junction depth affect the performance of the detector, and the electric field distribution in the detector is analyzed. The dependence of the recombination rate distribution on the structure parameters and the junction depth of p-n junction reveals the intrinsic physical mechanism that the structural parameters of p-n junction depth affect the crosstalk and quantum efficiency of the detector. And obtained the research conclusion which has the guiding significance to the detector optimization design. Secondly, through the analysis of the traditional structure mechanism of photovoltaic InSb infrared focal plane detector. A new structure of photovoltaic InSb infrared focal plane detector is obtained. The new structure of InSb infrared focal plane detector is preliminarily simulated and compared with the traditional structure. The results show that the performance of the new structure is better than that of the traditional structure. Meanwhile, the transient response of the detector is studied, and the influence of material parameters on the output response of the detector is mainly studied, including the doping concentration of the material. Carrier lifetime and carrier mobility.
【学位授予单位】：西安电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN215

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