GaN基热电材料表征及性质研究

发布时间：2018-01-15 12:14

本文关键词：GaN基热电材料表征及性质研究　出处：《河北科技大学》2015年硕士论文　论文类型：学位论文

【摘要】：热电材料是一种使用非常广泛的半导体功能材料,它可以实现热能和电能之间的相互转换。GaN基热电材料具有较大的禁带宽度、良好的热稳定性以及高的电导率和塞贝克(Seebeek)系数,所以,这些材料成为了一种非常有发展前景的热电材料。本文以GaN基热电材料为研究对象,搭建一套室温下测量半导体材料塞贝克系数和电导率的装置。此外,该设备实现了自动化控制,采用的控制程序是基于Labview测量控制软件平台,使用图形化编辑语言G编写程序。此设备是用来测量半导体薄膜材料的塞贝克系数和电导率的,塞贝克系数和电阻率是材料重要的热电输运性能参数。精确测定它们对深入研究半导体材料的热电输运机理,特别是对深入研究和开发新型半导体热电材料和器件具有非常重要的应用价值和理论意义。对GaN材料室温热电特性进行研究,结果表明,随着载流子浓度的增加迁移率减小,电导率增加。塞贝克系数降低,范围在100-500μV/K之间。在载流子浓度为1.60×1018 cm-3时,Ga N薄膜材料的热电功率因子有最大值为4.72×10-4 W/mK2,GaN薄膜的室温ZT达到极大值为0.0025。此外,将大块GaN材料和薄膜GaN材料的热电性能进行了对比研究,结果表明,薄膜GaN材料由于具有较高的位错散射,其塞贝克系数比大块GaN材料大。由于大块GaN材料的塞贝克系数比较低,所以其功率因数的范围在0.315×10-4 W/mK2到0.354×10-4 W/mK2之间。简单介绍了一下GaN器件的制作方法以及对其继续研究的展望。
[Abstract]:Thermoelectric material is a widely used semiconductor functional material. It can realize the conversion between thermal energy and electrical energy. Gan based thermoelectric material has a large bandgap. Good thermal stability and high conductivity and Seebeek coefficient, so. These materials have become a very promising thermoelectric materials. In this paper, GaN based thermoelectric materials as the research object, build a set of semiconductor materials at room temperature to measure the Seebeck coefficient and conductivity. In addition. The control program is based on Labview measurement and control software platform. This device is used to measure the Seebeck coefficient and conductivity of semiconductor thin film materials. Seebeck coefficient and resistivity are important parameters of thermoelectric transport performance. Especially, it has very important application value and theoretical significance to study and develop new semiconductor thermoelectric materials and devices. The thermoelectric properties of GaN materials at room temperature are studied, and the results show that. With the increase of carrier concentration, the conductivity increases and the conductivity decreases, the Seebeck coefficient decreases in the range of 100-500 渭 V / K, and the carrier concentration is 1.60 脳 1018 cm-3. The maximum thermoelectric power factor of GaN thin film is 4.72 脳 10 ~ (-4) W / m _ (K _ (2)) gan film, and the maximum value of ZT is 0.0025 at room temperature. The thermoelectric properties of bulk GaN material and thin film GaN material were compared and studied. The results show that the thin film GaN material has higher dislocation scattering. The Seebeck coefficient is larger than that of the bulk GaN material, and the Seebeck coefficient of the bulk GaN material is lower than that of the bulk GaN material. So the power factor ranges from 0.315 脳 10-4 W / mK2 to 0.354 脳 10-4. This paper briefly introduces the fabrication method of GaN device and the prospect of its further research.
【学位授予单位】：河北科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304

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