单晶硅多次加工时的亚表面损伤仿真分析

发布时间：2018-01-15 18:17

本文关键词：单晶硅多次加工时的亚表面损伤仿真分析　出处：《中国科技论文》2017年04期 　论文类型：期刊论文

【摘要】：基于分子动力学(molecular dynamics,MD)仿真技术,研究了单晶硅在多次加工时的亚表面损伤。分析了已加工和未加工的单晶硅模型的亚表面损伤;对已加工和未加工的表面分别进行了纳米划痕仿真,分析了划痕加工损伤的变化。仿真结果表明:切削加工后表面的硬度和弹性有不同程度的下降,有助于单晶硅工件表面材料的去除,减少了第2次加工时的亚表面损伤层深度;第2次加工的加工深度超过残余损伤层厚度的一半时,加工后的效果最优;加工深度完全在损伤层内时,会受到亚表面损伤层的原子密集化和力学性能的双重影响,造成损伤层增大。多次加工硅片时,应充分考虑加工深度与亚表面损伤层厚度的关系。
[Abstract]:Based on molecular dynamics molecular dynamics (MD) simulation technology. The subsurface damage of monocrystalline silicon during multiple machining was studied. The subsurface damage of the machined and unmachined monocrystalline silicon models was analyzed. Nano-scratch simulation was carried out on the machined and unmachined surfaces, and the change of scratch damage was analyzed. The simulation results showed that the hardness and elasticity of the machined surfaces decreased in varying degrees. It is helpful to remove the surface material of the monocrystalline silicon workpiece and reduce the depth of the subsurface damage layer during the second machining. When the processing depth of the second machining is more than half of the thickness of the residual damage layer, the effect is the best. When the machining depth is completely within the damage layer, it will be affected by the atomic density and mechanical properties of the sub-surface damage layer, resulting in the increase of the damage layer, and when the silicon wafer is processed many times. The relationship between processing depth and the thickness of subsurface damage layer should be fully considered.
【作者单位】：大连理工大学精密与特种加工教育部重点实验室;
【基金】：国家自然科学基金资助项目(51575083);国家自然科学基金重大研究计划资助项目(91323302) 高等学校博士学科点专项科研基金资助项目(20120041110035) 创新研究群体科学基金资助项目(51621064)
【分类号】：TH161+.1
【正文快照】： 随着电子科学技术的不断提高,对各种微机械、电子零件的加工精度越来越高。硅作为制造微电子、微机械零件的优良衬底材料[1],具有导电性较低、导热性高以及成本低等优点[2]。单晶硅是1种典型的硬脆材料,其强度极限与弹性极限非常接近,使得硅在经过一系列加工后,不可避免地会在

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