高能劳厄单色器晶体压弯机构的优化设计

发布时间：2018-01-16 10:33

  本文关键词：高能劳厄单色器晶体压弯机构的优化设计　出处：《中国科学院研究生院(上海应用物理研究所)》2017年硕士论文　论文类型：学位论文

  更多相关文章： 劳厄单色器 压弯机构 各向异性 长宽比 有限元分析

【摘要】：上海同步辐射光源二期工程将建造一条超硬多功能线站,超硬线采用超导扭摆器作为光源,光源水平发散角非常大,约为6 mrad。为有效利用此光源,超硬线采用一台高能劳厄双晶单色器。高能劳厄双晶单色器的核心部件是弧矢压弯机构,晶体弧矢半径与子午半径的优化会影响单色器的光通量和能量分辨率。因此,本文通过找寻可能对晶体弧矢与子午半径产生影响的因素,为高能劳厄单色器压弯机构的优化设计提供参考。本文介绍了超硬多功能线站的特点、高能劳厄单色器的组成以及高能劳厄单色器的工作原理。对单色器晶体、晶面和压弯半径的选择作了说明。讨论了同步辐射常用压弯方式的特点以及高能劳厄单色器常用机械压弯方式的优缺点。对高能劳厄单色器压弯机构的设计指标,压弯与调节系统作了简介。介绍了有限元方法,用ANSYS Workbench软件建立了有限元分析模型,精确模拟分析了单晶硅的各向异性、单晶硅的长宽比、叶簧片推压角、叶簧片尺寸对晶体压弯半径的影响。研究结果表明,Si(100)晶体最佳切割边界为[011]方向和[0-11]方向;晶体的优化尺寸为90 mm×40 mm×1 mm,其中有效长度、宽度为l×w=70 mm×40 mm;叶簧片推压角在0.015°内,叶簧片有效长度长度、厚度与宽度分别为53±0.25 mm、0.50+0.01 mm与50±0.25 mm时,晶体的弧矢半径与子午半径符合理论设计要求。最后,对压弯机构进行了热分析,比较分层加载与表面加载方式对晶体温度的影响,提出通过更换叶簧片材料可降低晶体温度的建议,优化结果表明可降低晶体温度21.82℃。对更换叶簧片材料后的压弯机构进行了位移载荷与热载荷的综合分析,结果符合要求。本文创新点在于采用各项异性有限元模型优化分析了高能劳厄单色器晶体压弯机构,并且结合工程实际分析了叶簧片尺寸一致性对压弯半径影响,通过优化叶簧片的材料降低了劳厄单色器晶体温度,优化成果已经应用于高能劳厄单色器压弯机构的原型样机中。
[Abstract]:A superhard multifunctional line station will be built in the second phase of Shanghai Synchrotron radiation light source project. The superconducting torsion pendulum is used as the light source. The horizontal divergence angle of the light source is very large, about 6 mrad. in order to make effective use of this light source. A high energy Laue double crystal Monochromator is used in the superhard wire. The key component of the high energy Laue double crystal Monochromator is the sagittal bending mechanism. The optimization of crystal arc radius and meridian radius will affect the luminous flux and energy resolution of Monochromator. This paper introduces the characteristics of super hard multifunctional line station, the composition of high energy Laue Monochromator and the working principle of high energy Laue Monochromator. The selection of crystal plane and bending radius is explained. The characteristics of synchrotron radiation common bending modes and the advantages and disadvantages of mechanical bending methods in high energy Laue Monochromator are discussed. The design index of bending mechanism of high energy Laue Monochromator is discussed. . The finite element method is introduced, the finite element analysis model is established by ANSYS Workbench software, and the anisotropy of monocrystalline silicon is accurately simulated. The effect of the aspect ratio of monocrystalline silicon, the pushing angle of leaf Reed and the size of leaf Reed on the bending radius of crystal is studied. [Direction and direction. [0-11] direction; The optimized size of the crystal is 90mm 脳 40mm 脳 1mm, in which the effective length and width are l 脳 wln 70mm 脳 40mm; When the pressing angle of leaf Reed is within 0.015 掳, the effective length, thickness and width of leaf Reed are 53 卤0.25 mm, 0.50 mm, 0.01 mm and 50 卤0.25 mm, respectively. The radius of the arc vector and the radius of the meridian of the crystal meet the theoretical design requirements. Finally, the thermal analysis of the bending mechanism is carried out to compare the effect of stratified loading and surface loading on the temperature of the crystal. It is suggested that the crystal temperature can be reduced by replacing the leaf Reed material. The optimized results show that the crystal temperature can be reduced by 21.82 鈩，

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