量子点光电探测器特性及其读出

发布时间：2018-01-16 23:26

本文关键词：量子点光电探测器特性及其读出　出处：《华东师范大学》2017年硕士论文　论文类型：学位论文

【摘要】：2000年以来,量子点光电探测器(Quantum Dots Photodetector,QDPD)在性能和阵列规模逐步取得令人瞩目的进步,通过与CMOS(Complementary Metal Oxide Semiconductor)读出电路(Readout Circuit,ROIC)连接,正在推向应用层面。本文研究新颖量子点光电探测器特性及其读出的主要内容:(1)应用Apsys仿真软件改变QDPD的结构参数:量子点密度、量子点层数、GaAs层厚度等,研究器件的光电流、暗电流、光电流与暗电流的比(Photocurrent Dark current Ratio,PDR)。进一步仿真研究双势垒阱中量子点光电探测器(Double Barrier Dots-in-well Photodetector,DB-DWELL-QDPD),共振增强量子点光电探测器(Resonant Cavity Enhance Photodetector,RCE-QDPD),分立吸收层、渐变层、电荷层和倍增层结构雪崩倍增光电探测器(Separated Absorption,Arading,Charge,and Multiplication Avalanche Photodiodes,SAGCM-APD)模型。(2)应用Apsys仿真软件研究光伏与光导型QDPD的I-V零点漂移机制。前者归因于非对称结构的光伏效应,后者归因于偏压对器件电容的充放电,通过零点漂移电压可以计算电容。(3)针对QDPD的实际特性,设计研究其读出,研究120 dB高动态范围,1.24 Ge-大电荷处理设计。流片测试结果证明了电路模块的室温与低温性能。
[Abstract]:Since 2000, quantum Dots photodetectors (QDPDs) have made remarkable progress in performance and array size. Read out Circuit through the readout circuit with CMOS(Complementary Metal Oxide Semiconductors. ROIC-based connection. In this paper, the characteristics of novel quantum dot photodetectors and the main content of their readout are studied. (1) the Apsys simulation software is used to change the structure parameter of QDPD: quantum dot density. The photocurrent, dark current, photocurrent and dark current ratio of photocurrent Dark current Ratio are studied. The double Barrier Dots-in-well Photodetector in double barrier wells is further simulated. DB-DWELL-QDPDO, Resonant Cavity Enhance Photodetector, Resonant Quantum Dot photodetector. RCE-QDPDT, discrete absorption layer, gradient layer, charge layer and multiplier layer structure avalanche multiplier photodetector separated sorptionn Arading. Charge,and Multiplication Avalanche Photodiodes. SAGCM-APD model. 2) the I-V 00:00 drift mechanism of photovoltaic and photoconductive QDPD is studied by using Apsys simulation software, the former is attributed to the photovoltaic effect of asymmetric structure. The latter is attributed to the charge and discharge of the device capacitance due to the bias voltage. The capacitance can be calculated by the 00:00 drift voltage.) according to the actual characteristics of the QDPD, the readout is designed and studied, and the 120dB high dynamic range is studied. 1.24 Ge- large charge processing design. The performance of the circuit module at room temperature and low temperature is proved by the flow sheet test.
【学位授予单位】：华东师范大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN36

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