高压大功率压接型IGBT器件并联芯片瞬态电流特性研究

发布时间：2018-01-20 23:10

本文关键词： 高压大功率压接型IGBT 测试平台开关瞬态电流分布特性 PETT振荡小信号特性　出处：《华北电力大学(北京)》2017年博士论文　论文类型：学位论文

【摘要】：随着我国新能源的发展,高压大功率压接型IGBT器件作为换流阀以及断路器中的核心器件,已经成为制约我国柔性直流输电电网建设的关键因素。研制国产高压大功率压接型IGBT器件,对于降低电网建设成本,提高清洁能源的消纳能力具有重要的意义。本文针对压接型IGBT器件的封装结构特点,研制了适用于高压大功率压接型IGBT器件的开关特性测试平台。分析了压接型IGBT器件内部封装寄生电感对多芯片并联时的瞬态电流分布特性的影响,并提出了封装结构优化方案。针对并联IGBT芯片在关断拖尾阶段的高频等离子体抽取渡越时间(Plasma Extraction Transit Time—PETT)振荡,本文提出了采用小信号分析方法研究IGBT关断拖尾阶段空间电荷区载流子引起的空间电荷效应,提出了抑制PETT振荡方法,成功抑制了大功率压接型IGBT器件在关断拖尾阶段的PETT振荡,提高了器件的可靠性。本文研制了高压大功率压接型IGBT器件开关特性测试平台,该平台具有机械压力均匀的特点。基于该测试平台,极大地促进了研发的封装和测试进度,实现了封好即测,快速准确地测量器件的开关特性。在此基础上,本文提出了同时采用开通和关断波形来提取测试平台换流回路杂散电感的方法,实现了IGBT开关特性测试平台杂散电感的准确计算,为提供权威的IGBT器件数据手册提供了基础。本文基于仿真计算和实验测量的方法,建立了凸台寄生电感的等效电路模型,揭示了凸台寄生电感对并联IGBT芯片开关瞬态电流分布特性的影响。在此基础上,提出了电流过冲最小和电流最均衡的两种凸台布局优化方法,仿真分析验证了该方法的有效性。最后,提出圆周形布局方法,这种方法实现了并联IGBT芯片开关瞬态过程中的电流分布一致和开关损耗一致。针对凸台布局对称,栅极PCB板不对称的布局方式,建立了并联IGBT芯片驱动回路的等效电路模型。基于实验测量的方法,测量了各个IGBT芯片驱动回路阻感参数,通过仿真分析和实验验证研究了栅极PCB板不对称情况下,并联IGBT芯片开通瞬态电流分布特性,并结合这部分研究结果与凸台对电流分布特性的影响,提出了双针+双层PCB板的结构,仿真结果表明,这种封装结构可以极大地改善并联IGBT芯片开通瞬态电流的一致性。本文分析了IGBT关断拖尾阶段,载流子穿过空间电荷区引起的空间电荷效应,提出采用小信号特性分析的方法研究了空间电荷区的电压、电流关系,揭示了PETT振荡与封装寄生电感、测试电压之间的关系。通过理论分析,提出了抑制PETT振荡的方法,实验结果验证了该方法的有效性。最后,将本文提出的方法应用于高压大功率的压接型IGBT器件,成功的抑制了器件在关断拖尾阶段的PETT振荡,提高了器件的可靠性,为进一步研制更大电流等级的器件奠定了基础。本文对于并联IGBT芯片瞬态电流特性的研究,促进了对并联IGBT芯片瞬态均流特性以及高频拖尾振荡的认识,可以为更高电流等级的器件研发提供参考。
[Abstract]:With the development of China's new energy, high power crimping type IGBT device as the core device of converter valve and breaker, has become a key factor restricting China's HVDC power grid construction. The development of domestic high power crimping type IGBT device, to reduce the cost of power grid construction, has an important significance to improve the clean energy consumptive capacity. According to the characteristics of package structure crimping type IGBT device, was developed for high voltage and high power crimping type IGBT device switching characteristics test platform. Analysis of the crimp type IGBT device inside the package parasitic inductance of multi chip parallel transient current distribution characteristics, and puts forward optimization scheme for parallel IGBT chip package structure. The transit time in high frequency plasma from off stage (Plasma Extraction tail - PETT Transit Time) is proposed in this paper by using small oscillation. The effect of space charge signal analysis method IGBT off tailing phase space charge region of carrier induced inhibition of PETT, put forward the method of oscillation, reduce power crimping type IGBT device in PETT oscillation off tailing phase, improve the reliability of the device. This paper developed a high voltage power switch type pressure test platform the IGBT device, the platform has the characteristics of uniform mechanical pressure. The test platform based on, has greatly promoted the progress of research and development of packaging and testing, to achieve good sealing is measured, the switching characteristics of measuring devices quickly and accurately. Based on this, this paper puts forward the method of turn-on and turn off waveform extraction test platform for flow circuit stray inductance, to achieve the accurate calculation of IGBT switching characteristics of stray inductance test platform, provides the basis for the IGBT device data manual authority. Based on the simulation The methods of calculation and experimental measurement of the equivalent circuit model is established. The boss reveals the influence of parasitic inductance, boss parasitic inductance on the current distribution characteristics of switching transient parallel IGBT chip. Based on this, puts forward two kinds of convex layout optimization method of current minimum overshoot and the current balance, the simulation analysis is proved to be effective the method. Finally, the circular layout method, this method realizes uniform current distribution and switching loss consistent switching transient process of parallel IGBT chip. The boss layout layout, PCB plate gate asymmetric, equivalent circuit model established a parallel IGBT chip drive circuit. Based on experimental method the measurement of each IGBT chip, drive circuit resistance and inductance parameters, through simulation analysis and experimental verification of PCB gate plate under the asymmetric, parallel IGBT chip transient current opening Fabric characteristics, combined with this part of the research results and convex effects on current distribution characteristics, puts forward the structure of double needle + double PCB plate, the simulation results show that this package structure can greatly improve the consistency of the parallel IGBT chip opened the transient current. Based on the analysis of the IGBT tail off stage, the effect of space charge carrier through the space charge region caused by the voltage on the space charge region method is proposed using the small signal characteristics of current relationship, reveals the PETT oscillation and package parasitic inductance, the relationship between the test voltage. Through theoretical analysis, put forward the method of suppression of PETT oscillation, the experimental results verify the validity of the method. At last crimping type IGBT devices, the proposed method is applied to high power, successful suppression devices in PETT oscillation off tailing phase, improve device reliability, as a This study laid the foundation for developing devices with larger current level. In this paper, the research on transient current characteristics of parallel IGBT chips has promoted the understanding of transient current sharing characteristics and high-frequency tailing oscillation of parallel IGBT chips, which can provide references for the development of devices with higher current level.

【学位授予单位】：华北电力大学(北京)
【学位级别】：博士
【学位授予年份】：2017
【分类号】：TN322.8

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