GaAs基微波功率器件热特性及高频压振电路的研究

发布时间：2018-01-21 04:25

本文关键词： HEMT 电学法热阻自激振荡　出处：《北京工业大学》2015年硕士论文　论文类型：学位论文

【摘要】：半导体微波功率器件在高频、大功率的应用中具有显著的优势,在现代社会中的应用也越来越广泛,通信、航天、计算机信号处理等领域都有所涉及。然而,在大功率工作下,器件会发生自热效应,有源区温度会越来越高,造成器件电学特性及使用寿命下降。因此,准确测量器件的沟道温度及热阻构成对器件的寿命及可靠性有着至关重要的作用。本文基于电学法测量半导体器件沟道温度原理,利用实验室自主研发的热阻测试仪,对微波功率器件的热特性以及高频压振电路设计等方面进行了深入的研究。本文主要包括以下工作:一、基于微波传输和阻抗匹配理论,分别对AlGaN/GaN HEMT器件和MMIC器件进行测试匹配电路的设计和测量。解决器件在测试过程中由于自身寄生参数产生的自激振荡,以及外加测试板时引入的信号串扰。应用本实验室的热阻测试仪,完成器件的稳态热阻测量等相关实验,并提出几种抑制消除电路自激振荡的方法。二、基于电学法测量器件有源区温度原理,利用本实验室热阻测试仪进行不同工作状态对器件稳态热阻影响的相关研究。选取AlGaAs/InGaAs pHEMT器件,测量出其温度系数和温敏参数,实验测量等功率下,不同漏源电压对器件稳态热阻的影响。利用红外热像仪监测器件表面温度变化,并与电学法测量结果进行对比。三、基于热阻测试仪测量原理,改变测试条件,施加多次连续脉冲激励,测量AlGaN/GaN HEMT器件在不同占空比的单次脉冲下的结温,以及结温随脉冲次数的变化轨迹,并研究器件在不同占空比脉冲下的瞬态热阻。四、利用工艺及器件仿真工具ISE-TCAD对器件进行等功率下的电场强度仿真,模拟在不同漏源电压下的器件内部电场分布情况,探究造成器件在不同工作状态下热阻改变的原因。
[Abstract]:Semiconductor microwave power devices have significant advantages in high-frequency and high-power applications. They are also more and more widely used in modern society, such as communication, aerospace, computer signal processing and other fields. Under the high power operation, the device will have the self-heating effect, and the temperature in the active region will be higher and higher, which will lead to the decrease of the electrical characteristics and service life of the device. The accurate measurement of channel temperature and thermal resistance is very important to the lifetime and reliability of semiconductor devices. This paper is based on the principle of measuring channel temperature of semiconductor devices. The thermal characteristics of microwave power devices and the design of high-frequency voltage circuit are studied by using the thermal resistance tester developed by the laboratory. The main contents of this paper are as follows: 1. Based on microwave transmission and impedance matching theory. Design and measure the matching circuit of AlGaN/GaN HEMT device and MMIC device, and solve the self-excited oscillation caused by parasitic parameters in the test process. And the signal crosstalk introduced in the external test board. By using the thermal resistance tester in our laboratory, the steady-state thermal resistance measurement of the device and other related experiments are completed, and several methods to suppress the self-excited oscillation of the circuit are put forward. 2. Based on the principle of measuring the active region temperature of the device by electrical method. The influence of different working states on the steady-state thermal resistance of the device was studied by using the thermal resistance tester in our laboratory. The AlGaAs/InGaAs pHEMT device was selected. The temperature coefficient and temperature sensitive parameters were measured and the influence of different leakage voltage on the steady-state thermal resistance of the device was measured experimentally. The surface temperature change of the device was monitored by infrared thermal imager. And compared with the results of electrical measurement. Third, based on the measuring principle of thermal resistance tester, change the test conditions and apply multiple continuous pulse excitation. The junction temperature of AlGaN/GaN HEMT device under single pulse with different duty cycle and the track of junction temperature with pulse number were measured. The transient thermal resistance of the device under different duty cycle pulse is studied. Fourthly, the electric field intensity of the device is simulated at the same power by using the process and device simulation tool ISE-TCAD. The internal electric field distribution of the device under different drain voltage is simulated to explore the causes of the thermal resistance change under different working conditions.
【学位授予单位】：北京工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN61

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