一种超低功耗高性能的亚阈值全CMOS基准电压源

发布时间：2018-01-21 20:22

  本文关键词： 专用集成电路(ASIC) 超低功耗 电压基准源 亚阈值 电源电压抑制比(PSRR) 共源共栅电流镜　出处：《半导体技术》2016年04期 　论文类型：期刊论文

【摘要】：介绍了一种超低功耗、无片上电阻、无双极型晶体管(BJT)的基于亚阈值CMOS特性的基准电压源,该带隙基准源主要用于低功耗型专用集成电路(ASIC)。采用Oguey电流源结构来减小静态电流,以降低功耗。通过使用工作在线性区的MOS管代替传统结构中的电阻消除迁移率和电流的温度影响,同时减小芯片面积;采用共源共栅电流镜以降低电源电压抑制比和电压调整率。电路基于SMIC 0.18μm CMOS工艺进行仿真。仿真结果表明,在-45~130℃内,温漂系数为29.1×10-6/℃,电源电压范围为0.8~3.3 V时,电压调整率为0.056%,在100 Hz时,电源电压抑制比为-53 d B。电路功耗仅为235 n W,芯片面积为0.01 mm2。
[Abstract]:An ultra-low power, no on-chip resistor, no bipolar transistor (BJT) based reference voltage source based on sub-threshold CMOS characteristics is introduced. The bandgap reference is mainly used in low power ASIC. The Oguey current source structure is used to reduce the static current. In order to reduce power consumption, the temperature effect of mobility and current is eliminated by replacing the resistance in the traditional structure with the MOS transistor operating in the linear region, and the chip area is reduced. The circuit is simulated based on SMIC 0.18 渭 m CMOS process. The simulation results show that the circuit can reduce the voltage rejection ratio and voltage adjustment rate. When the temperature drift coefficient is 29.1 脳 10 ~ (-6) / 鈩，

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