一种超宽带正交调制器片上巴伦的设计

发布时间：2018-01-23 09:49

本文关键词： 超宽带片上巴伦仿真 HFSS S参数　出处：《微电子学》2016年06期 　论文类型：期刊论文

【摘要】：采用0.18μm GeSi BiCMOS工艺,通过调节中心抽头位置、设计八边形螺旋电感、添加屏蔽层、优化线圈外径与金属线宽等方法,设计了一种平衡性好、插入损耗小的片上巴伦。创新性地在HFSS模型中引入GSG焊盘,避免了去嵌入处理的复杂计算与计算误差。仿真结果表明:在500 MHz频率处,电路的插入损耗为3.5dB,幅度不平衡度为0.13dB,相位不平衡度为0.38°;在4GHz频率处,插入损耗为1.8dB,幅度不平衡度为1.62dB,相位不平衡度为2.85°。对样品的S参数幅度及相位进行测试,实测结果与仿真值吻合。该巴伦可应用于500 MHz~4GHz的超宽带正交调制器中,具有较好的应用前景。
[Abstract]:Using 0.18 渭 m GeSi BiCMOS process, the octagonal spiral inductor is designed by adjusting the center tap position, the shielding layer is added, and the coil outer diameter and metal linewidth are optimized. A kind of on-chip Barron with good balance and low insertion loss is designed. The GSG pad is introduced into the HFSS model innovatively. The simulation results show that the insertion loss is 3.5 dB and the amplitude unbalance is 0.13 dB at 500 MHz frequency. The phase unbalance is 0.38 掳; At the frequency of 4GHz, the insertion loss is 1.8 dB, the amplitude unbalance is 1.62 dB, and the phase unbalance is 2.85 掳. The S parameter amplitude and phase of the sample are measured. The measured results are in good agreement with the simulation results. The Barron can be used in 500 MHz~4GHz UWB quadrature modulator and has a good application prospect.
【作者单位】：成都振芯科技股份有限公司;电子科技大学微电子与固体电子学院;
【分类号】：TN761
【正文快照】： 1引言电感与巴伦是射频电路中非常重要的无源器件。片上电感的结构相对简单,对其理论研究较为深入[1,2],各种工艺提供了类型多样的片上电感供设计者使用。巴伦是一种可以实现单端与差分相互转换的无源器件[3,4]。集成在片上的巴伦存在很多寄生效应,对其研究不像电感那样深入,

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