利用显微喇曼光谱进行SiC单晶片应力分析

发布时间：2018-01-23 13:26

本文关键词： 显微喇曼光谱 H-SiC 单晶片应力分析横向折叠光学(TO)模　出处：《半导体技术》2017年10期 　论文类型：期刊论文

【摘要】：为了对4H-SiC单晶片进行无损应力表征,采用显微喇曼光谱仪测量了3英寸(1英寸=2.54 cm)和4英寸4H-SiC单晶片的显微喇曼光谱,并依据喇曼频移峰的移动及喇曼频移峰的半高宽(FWHM)分析SiC单晶片中呈现的应力类型和应力大小。在显微喇曼光谱中,4H-SiC单晶片的横向折叠光学(TO)模为表征单晶片应力的特征峰,其无应力状态的标准峰位值为777 cm~(-1)。对4H-SiC单晶片进行应力分析,发现3英寸和4英寸SiC单晶片内喇曼频移峰均发生蓝移和红移,表明单晶片内同时存在张应力和压应力。相比生长初期的样品,晶体生长末期的应力值有不同程度的升高,同时单晶片的喇曼频移峰的FWHM变窄,表明生长末期的单晶片结晶质量高于生长初期。
[Abstract]:In order to characterize the nondestructive stress of 4H-SiC single crystal wafer, the microRaman spectra of 4H-SiC single crystal wafer and 4H-SiC single crystal wafer were measured by microRaman spectrometer (3 inch / 1 inch / 2.54 cm) and 4 inch / 4H-SiC single crystal wafer respectively. According to the shift of Raman shift peak and the half maximum width of Raman shift peak FWHM, the stress types and stress size in SiC single crystal wafer were analyzed. The transverse folding optical TOV mode of 4H-SiC single crystal wafer is the characteristic peak of the single crystal sheet stress. The standard peak value of its stress-free state is 777 cm ~ (-1) ~ (-1). The stress analysis of 4H-SiC single crystal wafer is carried out. It was found that both blue shift and red shift occurred in the Raman shift peaks of 3-inch and 4-inch SiC single crystals, which indicated that there were both tensile and compressive stresses in the monocrystalline wafers, compared with the samples at the initial growth stage. At the end of crystal growth, the stress value increased in varying degrees, and the FWHM of Raman shift peak of single crystal wafer became narrower, indicating that the crystal quality of single crystal wafer at the end of growth was higher than that at the beginning of growth.
【作者单位】：中国电子科技集团公司第四十六研究所;
【分类号】：TN304.24
【正文快照】： 0引言碳化硅(Si C)是重要的间接带隙半导体之一,具有优异的物理特性和电学特性。Si C电子器件在高温、高频和大功率等特殊领域都具有很重要的应用价值[1-2]。由于物理气相传输(physicalvapor transport,PVT)法Si C单晶生长过程是在2 000℃以上的高温环境中进行,且Si C单晶与石

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