一种基于SiGe工艺的多功能下变频芯片的设计与实现

发布时间：2018-01-25 23:14

本文关键词： 正交混频器有源巴伦多相滤波器高线性度　出处：《微波学报》2017年05期 　论文类型：期刊论文

【摘要】：随着射频收发组件小型化的要求越来越高,射频单片集成电路向小型化和多功能化方向发展。基于TSMC 0.35μm SiGe工艺成功研制了一款多功能下变频芯片。片上集成了正交(I/Q)混频器、有源巴伦、多相滤波器、输出缓冲器和LDO。通过对整个电路合理的版图设计,实现了芯片的小型化,芯片裸片尺寸仅为2.2 mm×1.5mm。测试结果表明,多功能下变频芯片射频和本振频率范围为900~1300 MHz,中频频率范围100~500 MHz,具有良好的正交宽中频输出特性,匹配良好;变频增益大于-1 dB,1 dB压缩输入功率可达到8 dBm,线性度良好;本振输入功率0 dBm,整个电路功耗为0.45 W。
[Abstract]:With the miniaturization of RF transceiver components, the requirements are becoming higher and higher. RF monolithic IC is developing towards miniaturization and multifunction. A multifunctional down-conversion chip based on TSMC 0.35 渭 m SiGe process has been successfully developed. The quadrature I / Q is integrated on the chip. Mixer. Active Barron, polyphase filter, output buffer and LDO. The chip is miniaturized by reasonable layout design of the whole circuit. The size of the bare chip is only 2.2 mm 脳 1.5 mm. The test results show that the RF and local oscillator frequency range of the multi-function down-conversion chip is 900 ~ 1 300 MHz. The intermediate frequency range is 100m Hz, which has good output characteristics of orthogonal wide intermediate frequency and good match. The frequency conversion gain is greater than 1 dB and the input power can reach 8 dBm, and the linearity is good. The local oscillator input power is 0 dBm and the power consumption of the whole circuit is 0.45 W.
【作者单位】：四川九洲电器集团有限责任公司;
【分类号】：TN402
【正文快照】： 引言随着武器装备系统的不断发展,系统对产品小型化、低功耗、可靠性的要求越来越高,传统的混合集成电路将很难适应新的发展[1]。微波多功能芯片(MSOC)的出现,使得上述问题得到完美的解决。从微波集成电路到单片微波集成电路(MMIC)再到多功能芯片,微波集成电路设计领域将经历

【相似文献】