母排杂散电感对IGBT模块功率端子不均流影响

发布时间：2018-01-26 01:56

本文关键词： 绝缘栅双极型晶体管母排杂散电感不均流　出处：《电力电子技术》2017年07期 　论文类型：期刊论文

【摘要】：IHM-B封装绝缘栅双极型晶体管(IGBT)模块有3组功率端子,其内部可等效为3组IGBT并联。母排杂散电感的分布对流进该模块功率端子电流的不均流程度有很大影响。以一种半桥式结构的母排作为研究对象,建立影响IHM-B封装的IGBT模块功率端子间不均流程度杂散电感的等效数学模型。通过Q3D有限元仿真软件提取出该母排的自感与互感。搭建双脉冲测试电路,分别提取出在开通瞬态某一时刻流进该IGBT模块3组端子的电流变化率的实验数据,进而分析母排杂散电感对IGBT模块功率端子不均流的影响。实验分析结果证明,通过改变母排结构以减小等效杂散电感的差异,能很好地消除功率端子不均流现象。
[Abstract]:The IHM-B package insulated gate bipolar transistor (IGBT) module has three sets of power terminals. Its internal equivalent is three groups of IGBT parallel. The distribution of busbar stray inductor convection into the power terminal current of the module has a great impact on the degree of uneven current. A half-bridge bus is used as the research object. An equivalent mathematical model of the stray inductance of uneven flow between power terminals of IGBT module which affects IHM-B packaging is established. The self-inductance and mutual inductance of the bus are extracted by using Q3D finite element simulation software, and the dual pulses are built. Test the circuit. The experimental data of the current change rate of the three groups of terminals in the IGBT module are extracted respectively at a certain time when the IGBT module is switched on. Furthermore, the influence of busbar stray inductor on the uneven flow of power terminal in IGBT module is analyzed. The experimental results show that the difference of equivalent stray inductor can be reduced by changing the bus structure. It can eliminate the uneven flow of power terminal well.
【作者单位】：中国矿业大学电气与动力工程学院;
【分类号】：TN322.8
【正文快照】： i引言母排的杂散电感对大功率IGBT模块的稳定运行具有重要影响。为提氋耐受电流等级,大功率IGBT模块内部通常是将IGBT芯片作并联封装,导致IGBT芯片电流分布不均。在母排杂散电感对IGBT模块电流影响的研究中,基于模块内部杂散电感的研究较多而对于IHM-B封装的IGTB模块,由于其封

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