用于高压快恢复二极管的200mm硅外延材料的生长

发布时间：2018-01-26 18:37

本文关键词： 快恢复二极管(FRD) 外延滑移线电阻率不均匀性缓冲层　出处：《半导体技术》2017年02期 　论文类型：期刊论文

【摘要】：1 200 V快恢复二极管(FRD)器件用200 mm外延片由于直径较大、外延层较厚(约130μm)以及电阻率较高(约60Ω·cm),外延层滑移线、电阻率不均匀性和缓冲层过渡区不易控制。通过在水平板式炉上进行工艺优化实验,采用900℃恒温工艺,外延层滑移线总长由原来的约90 mm降低至约15 mm。采用氢气变流量赶气工艺,外延层电阻率不均匀性由原来的约5%提升至小于3%。缓冲层结构生长之前,预生长本征覆盖层(帽层)可以降低缓冲层的过渡区宽度,由10μm降低至5μm,改善了缓冲层的有效厚度,同时也可以降低缓冲层的电阻率不均匀性,由2.5%降低至1.1%。以上措施的实施,满足了1 200 V FRD器件的材料指标要求,外延片出货量大幅度增加,提升了产业化水平。
[Abstract]:Because of the larger diameter, the epitaxial layer is thicker (about 130 渭 m) and the resistivity is higher (about 60 惟路cm). The slip line of epitaxial layer, the inhomogeneity of resistivity and the transition zone of buffer layer are difficult to control. The total length of slip line of epitaxial layer is reduced from about 90 mm to about 15 mm. The resistivity inhomogeneity of the epitaxial layer is increased from about 5% to less than 3. Before the buffer layer structure grows, the pre-growth intrinsic layer (cap layer) can reduce the width of the buffer layer transition zone. The effective thickness of buffer layer is improved from 10 渭 m to 5 渭 m, and the inhomogeneity of resistivity of buffer layer is reduced from 2.5% to 1.1. The material requirement of 1 200V FRD device is satisfied, and the output quantity of the epitaxial wafer is increased greatly, and the industrialization level is improved.
【作者单位】：河北普兴电子科技股份有限公司河北省硅基外延材料工程技术研究中心;
【分类号】：TN304.054
【正文快照】： 0引言随着绝缘栅双极晶体管(insulated gate bipolartransistor,IGBT)、垂直双扩散金属氧化物半导体场效应晶体管(vertical double diffused metal oxidesemiconductor field-effect transistor,VDMOSFET)等大功率器件的广泛应用,与之配套的快恢复二极管(fast recovery diode,

【相似文献】