500V P沟VDMOS的设计

发布时间：2018-01-28 01:46

本文关键词： 功率器件 P沟道VDMOS Tsuprem4Medici 击穿电压　出处：《电子科技大学》2015年硕士论文　论文类型：学位论文

【摘要】：VDMOS是将微电子技术和电力电子技术融合起来诞生的新一代功率半导体器件。其不仅具有传统MOS的开关速度快、驱动功率小、负温度系数等优点,而且还拥有高击穿电压、低导通电阻、高可靠性等性能。由于具备了上述技术特点,VDMOS在开关电源、电机控制、射频通信、音频放大器、高频振荡器、不间断电源、节能灯、有源功率因数校正、逆变器等领域得到了广泛应用。但是在航空、航天和新能源领域应用,P沟道VDMOS器件拥有不能被N沟道VDMOS所能取代的优点,比如较强的抗辐照能力。且P沟道和N沟道VDMOS器件结合使用可以优化电路布局,提升电路性能。目前国内大功率的P沟道VDMOS绝大部分依赖进口。于是,研发完全基于国内生产线工艺水平的大功率P沟道VDMOS是刻不容缓的事情,且具有重大的现实意义。本论文在与国内某知名单位的合作项目基础上,进行500 V耐压的P沟道VDMOS的设计。主要参数指标:击穿电压为-500 V,阈值电压为-3~-5 V,导通电阻小于等于4.9?。依托合作方生产线进行高压P沟道VDMOS的工艺开发,同时进行该器件的元胞和终端设计,最后流片测试分析及优化。本论文的主要内容如下:1、参考国外对应产品手册及项目合作方的0.5微米六T生产线,建立了产品的工艺制程,确定了产品基本参数指标;结合二维仿真器Tsuprem4Medici进行了工艺和器件的联合仿真,包括静态参数和动态参数;经过仿真优化后确定了器件结构参数和工艺参数。仿真结果,击穿电压为-527 V,阈值电压为-3.6 V,特征导通电阻0.192Ω·cm2,开启时间为85 ns,关断时间为140 ns,输入电容为567 nF,输出电容为58 nF,反向传输电容为11 nF,体二极管反向恢复时间为150 ns;仿真结果均满足器件各设计参数指标。2、结合工艺线的机台能力(如腐蚀方法、光刻精度等),绘制了该产品版图;从材料角度和Nbody的注入剂量等几个方面进行工艺条件分片,完成流片后进行测试分析,将测试结果与设计目标参数对比发现静态参数和动态满参数基本满足要求,但动态参数余量较小。3、最后进行流片总结,为后续改善芯片特性、完成芯片从样品到产品质的飞跃提供充足的数据资料支持。
[Abstract]:VDMOS is a new generation of power semiconductor devices which combines microelectronics technology with power electronics technology. It not only has the advantages of fast switching speed, low driving power and negative temperature coefficient of traditional MOS. It also has high breakdown voltage, low on-resistance, high reliability and so on. Because of the above technical features, VDMOS in switching power supply, motor control, radio frequency communication, audio amplifier, high-frequency oscillator. Uninterruptible power supply, energy-saving lamp, active power factor correction, inverter and other fields have been widely used, but in aviation, aerospace and new energy applications. P-channel VDMOS devices have advantages that can not be replaced by N-channel VDMOS, such as strong radiation resistance, and the combination of P-channel and N-channel VDMOS devices can optimize the circuit layout. Improve the performance of the circuit. At present, most of the domestic high-power P-channel VDMOS rely on imports. It is urgent to develop high-power P-channel VDMOS based on the domestic production line technology level, and it is of great practical significance. This paper is based on the cooperation project with a well-known unit in China. Design of 500V voltage-resistant P-channel VDMOS. Main parameters: breakdown voltage of -500V, threshold voltage of -3ng-5V, on-resistance of less than 4.9? The process of high-voltage P-channel VDMOS is developed based on the cooperative production line, and the cell and terminal design of the device is carried out. Finally, the flow sheet is tested and optimized. The main contents of this thesis are as follows: 1. Referring to the foreign product manual and the 0.5 micron six-T production line of the project partner, the process of the product is established, and the basic parameters of the product are determined. Combined with two-dimensional simulator Tsuprem4Medici, the process and device are simulated, including static and dynamic parameters. The simulation results show that the breakdown voltage is -527V, the threshold voltage is -3.6V, and the characteristic on-resistance is 0.192 惟路cm2. The opening time is 85 ns, the turn-off time is 140 ns, the input capacitance is 567 nF, the output capacitance is 58 nF, and the reverse transmission capacitance is 11 NF. The reverse recovery time of the bulk diode is 150 ns; The simulation results all meet the design parameters of the device .2. combined with the machine capacity of the process line (such as corrosion method, lithography precision, etc.), the layout of the product is drawn. The process conditions were divided from material angle and Nbody implantation dose, and then the flow sheet was tested and analyzed. Comparing the test results with the design parameters, it is found that the static parameters and the dynamic full parameters basically meet the requirements, but the dynamic parameters allowance is small. Finally, the flow sheet is summarized to improve the chip characteristics. Complete the chip from sample to product quality leap to provide adequate data support.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386

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