UHF频段pHEMT宽带低嗓放芯片设计

发布时间：2018-01-29 18:41

本文关键词： 特高频接收机芯片低噪声放大器开关　出处：《浙江大学》2016年硕士论文　论文类型：学位论文

【摘要】：近几年,随着无线通信技术的迅猛发展,对于接收机系统的要求越来越严格。低噪声放大器位于接收机的第一级,是决定其灵敏度、动态范围、抗干扰能力等性能参数的关键。实际应用中,当天线接收到大数量级的信号时,信号经过低噪声放大器后,会使混频器后端的电路模块饱和,导致接收机无法正常工作。因而本论文设计一款,含有旁路开关功能的宽带低噪放芯片。当接收微弱信号时,芯片将信号放大传输到后端电路；而当输入信号过强时,通过内部开关切换,关闭放大功能,信号直接到达后端电路。本论文完成的主要工作包括,首先分析芯片内部前级宽带低噪声放大器,以及后级SPDT射频开关的基本设计理论；其次完成芯片的原理图仿真和版图设计；最后经过流片生产,对芯片进行调试、封装工作。芯片的实际测试结果表明,在400～700MHz频段内,输入回波损耗低于-10dB;噪声系数在0.85～1.05dB范围内；小信号增益高于18dB；输入三阶交调点高于OdBm；旁路开关插入损耗在-1.1～-0.99dB范围内；静态功耗电流保持在10mA。满足设计指标的需求,在重要参数指标上超过了目前市场上的商用产品。
[Abstract]:In recent years, with the rapid development of wireless communication technology, the requirements of receiver system become more and more strict. LNA is located in the first stage of the receiver, which determines its sensitivity and dynamic range. The key of performance parameters such as anti-jamming ability. In practical application, when the antenna receives a signal of the order of magnitude, the signal passes through the low-noise amplifier, and the circuit module at the back end of the mixer will be saturated. As a result, the receiver can not work properly. Therefore, this paper designs a broadband low-noise amplifier chip with bypass switch function. When the weak signal is received, the chip amplifies the signal to the back-end circuit; When the input signal is too strong, switching through the internal switch, turn off the amplification function, the signal directly to the back-end circuit. The main work accomplished in this paper includes: first, the analysis of the chip internal front-stage broadband low-noise amplifier. And the basic design theory of the rear stage SPDT RF switch; Secondly, the schematic simulation and layout design of the chip are completed. Finally, the chip is debugged and packaged through the chip production. The actual test results show that the input echo loss is less than -10dB in the 700MHz band. The noise coefficient is in the range of 0.85 ~ 1.05dB; The small signal gain is higher than 18 dB; The third order crossover point was higher than OdBm. The insertion loss of bypass switch is in the range of -1.1 ~ 0.99dB; The static power consumption current is kept at 10 Ma. It meets the requirements of the design index and exceeds the commercial products in the current market in terms of important parameters.
【学位授予单位】：浙江大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN722.3

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