C波段宽频带低温低噪声放大器的研制

发布时间：2018-02-02 01:30

本文关键词： 微波量子点谐振腔宽频带低温低噪声放大器　出处：《中国科学技术大学》2015年硕士论文　论文类型：学位论文

【摘要】：随着微波测量测量技术的日益发展,测量系统越来越多地被要求在低温甚至极低温的环境下进行测量工作。特别在半导体量子点领域中谐振腔与量子点耦合的低温测量系统中,需要同时用到两个低噪声放大器,并分别要求它们在4K极低温和室温下工作。由于量子点信号十分微弱,这就要求作为接收信号前端的放大器在抑制噪声的同时提供足够大的增益来放大量子点信号。而且不同腔的谐振频率变化较大,还需要放大器有较大的带宽。本文首先介绍了C波段宽频带低温低噪声放大器的研制意义。随后介绍了宽频带低温低噪声放大器的基础理论,并详细介绍了宽频带低温低噪声放大器的设计方法,包括稳定性、偏置网络、匹配网络的设计等。接着对宽频带低温低噪声放大器的仿真和实测结果的偏差进行分析,并引入S参数的去嵌入技术对其进行修正。最后介绍了C波段宽频带低温低噪声放大器PCB电路版图的制作、金属屏蔽盒的设计和其在室温和4K极低温下的测试结果。本文设计的C波段宽频带低温低噪声放大器采用三级联结构,其工作频段为5-6.5GHz,在室温下测量增益为30.7±1dB,输入输出反射损耗均小于-10dB,噪声系数小于1.6dB。在4K极低温的条件下测试,通过适当调整放大器的偏置电压后,其增益能达到34.3±1.3dB。
[Abstract]:With the development of microwave measurement technology. Measurement systems are increasingly required to measure at low or even very low temperatures, especially in low-temperature measurement systems where resonators are coupled with quantum dots in the field of semiconductor quantum dots. Two low-noise amplifiers are required to operate at 4K at low temperature and at room temperature respectively. The quantum dot signal is very weak. This requires the amplifier as the front end of the received signal to provide a large gain to amplify the quantum dot signal while suppressing the noise, and the resonant frequency of different cavities varies greatly, and the amplifier also needs a large bandwidth. This paper first introduces the development significance of C-band low temperature low noise amplifier and then introduces the basic theory of wide band low temperature low noise amplifier. The design method of broadband low temperature and low noise amplifier is introduced in detail, including stability and bias network. The design of matching network and so on. Then the deviation of simulation and measured results of broadband low temperature and low noise amplifier is analyzed. The S-parameter de-embedding technique is introduced to modify it. Finally, the fabrication of C-band low temperature low-noise amplifier PCB circuit layout is introduced. The design of metal shield box and its test results at room temperature and 4 K very low temperature. The C-band broadband low-temperature low-noise amplifier is designed with a three-stage structure. The operating frequency range is 5-6.5 GHz, and the measured gain is 30.7 卤1dB at room temperature. The input-output reflection loss is less than -10 dB, and the noise coefficient is less than 1.6 dB. At 4K low temperature, the bias voltage of the amplifier is adjusted properly. The gain can reach 34.3 卤1.3 dB.
【学位授予单位】：中国科学技术大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN722.3

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