晶圆各向异性对4H-SiC基VDMOSFET单粒子效应的影响

发布时间：2018-02-02 07:29

本文关键词： H-SiC 晶圆各向异性单粒子烧毁单粒子栅穿　出处：《固体电子学研究与进展》2017年04期 　论文类型：期刊论文

【摘要】：研究了晶圆各向异性对4H-SiC基垂直双扩散MOSFET(VDMOSFET)单粒子效应的影响。建立了器件二维仿真结构,选取合适的仿真模型并对参数进行了修正。仿真结果表明,基于(0001)和(11 2-0)晶圆器件的单粒子烧毁(SEB)阈值电压(V_(SEB))分别为350V和255V,SEB发生时的临界击穿电场强度分别为2.4×10~6 V/cm和1.8×10~6 V/cm。在V_d=30V、V_g=-13.9 V的偏置条件下,两种晶圆器件的氧化层最大瞬态电场均为5.6×10~6 V/cm。结果表明晶圆各向异性导致(0001)晶圆器件的抗SEB能力更强,而对单粒子栅穿效应(SEGR)没有影响。
[Abstract]:The effect of wafer anisotropy on the single particle effect of 4H-SiC vertical double diffusion MOSFETs VDMOSFETs is studied. The two-dimensional simulation structure of the device is established, the appropriate simulation model is selected and the parameters are modified. The threshold voltage of single particle burn out SEB is 350 V and 255 V / V SEB, respectively. The critical breakdown electric field intensity is 2.4 脳 10 ~ 6 V / cm and 1.8 脳 10 ~ (6) V / r ~ (cm) respectively. Under the bias condition of Vd30V / VG ~ (-13.9) V, the critical breakdown electric field intensity is 2.4 脳 10 ~ (6) V / cm and 1.8 脳 10 ~ (6) V / cm, respectively. The maximum transient electric field of the oxide layer of the two wafers is 5.6 脳 10 ~ (6) V / cm ~ (-1). The results show that the wafer anisotropy leads to a stronger resistance to SEB, but has no effect on the single-particle gate tunneling effect.
【作者单位】：空军工程大学理学院;空军第一航空学院;
【基金】：国家自然科学基金资助项目(11405270)
【分类号】：TN386
【正文快照】： ***引言随着空间技术的发展,垂直双扩散MOSFET(Vertical double-diffused MOSFET,VDMOSFET)应用于航天器的电力系统中遭受着严重的辐射效应,在各类辐射效应引发的故障中,由单粒子效应(Single event effect,SEE)导致的故障占28.5%[1]。VDMOSFET器件中发生单粒子烧毁(Single eve

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