有机微纳单晶场效应晶体管的大规模制备及其在柔性应变传感器中的应用研究

发布时间：2018-02-05 22:29

本文关键词： 场效应晶体管玻璃纤维 CuPc微纳单晶红荧烯微纳单晶柔性器件应变传感器　出处：《东北师范大学》2017年硕士论文　论文类型：学位论文

【摘要】：有机单晶具有完美的晶体结构,具有比有机薄膜更少的晶界和缺陷,通常用于研究半导体材料的本征性质和制备高性能的光电器件。十几年来,文献中已经报道的有机单晶场效应晶体管的制备方法由于不能够实现器件的大规模和高效率制备,在一定程度上限制了相关课题的研究进程。此外,基于有机电子构筑的柔性应变传感器因具有广阔的应用前景而受到广泛关注,但是尚没有文献系统地研究柔性有机微纳单晶场效应晶体管的性能与应变之间的关系和探究其在应变传感器中的潜在应用。针对以上两个问题,本论文首先提出一种新的器件制备方法,即利用玻璃纤维作为掩膜,最终实现了器件的大规模和高效制备,并基于超薄、柔性的红荧烯微纳单晶,构筑了“柔性可外接测试”的场效应晶体管器件,研究了应变对场效应性能的影响,探究了其在应变传感器中的应用。主要包括以下内容:1.利用物理气相输运的方法得到了CuPc和红荧烯微纳单晶,并对其进行了晶体结构和表面形貌的表征。基于CuPc微纳单晶,提出了一种大规模、高效率制备有机微纳单晶场效应晶体管的方法——“玻璃纤维掩膜法”。主要利用玻璃纤维质轻、易吸附于绝缘层衬底表面而不脱落的特点,将其作为掩膜可以一次性在同一衬底上获得15个器件。测试结果表明,所有的器件均具有场效应性能,其中迁移率最高为0.7 cm2V-1s-1。利用改进后的“玻璃纤维掩膜法”,基于红荧烯微纳单晶,制备了晶体管阵列,研究了半导体层的厚度对器件性能的影响。2.基于红荧烯微纳单晶,提出了一种构筑“柔性可外接测试”场效应晶体管的方法,并实现了外接测试。结果表明,所制备的柔性器件具有高迁移率、高稳定性,且不存在磁滞现象。进而,研究了在不同应变条件下场效应性能的变化规律。静态弯曲测试的结果显示,柔性器件在受到压缩应变时迁移率增大,受到拉伸应变时迁移率减小。动态弯曲测试的结果表明,柔性器件对于拉伸应变有较好的响应。在拉伸应变为-0.1%到-0.2%的范围内,响应的灵敏度高达123,响应和恢复时间分别为0.9 s和1 s。总之,柔性有机微纳单晶场效应晶体管可以应用于小应变的高灵敏监测,显示了其在应变传感器中的应用前景。
[Abstract]:Organic single crystals have perfect crystal structure, less grain boundaries and defects than organic thin films. They are usually used to study the intrinsic properties of semiconductor materials and to fabricate high performance optoelectronic devices. The methods of fabricating organic single crystal field-effect transistors which have been reported in the literature have limited the research progress to some extent due to their inability to achieve large-scale and high-efficiency fabrication of devices. Flexible strain sensors based on organic electronics have attracted wide attention due to their wide application prospects. However, there is no literature to systematically study the relationship between the performance and strain of flexible organic micro-nanocrystalline FET and to explore its potential application in strain sensors. In this thesis, a new fabrication method is proposed, that is, glass fiber is used as the mask to achieve the large scale and high efficiency fabrication of the device, and it is based on the ultra-thin and flexible red fluorene micronanocrystalline crystal. A field effect transistor (FET) device with "flexible external test" is constructed, and the effect of strain on the performance of FET is studied. Its application in strain sensors is explored. The main contents are as follows: 1. CuPc and red fluorene micronanocrystals are obtained by physical vapor transport. The crystal structure and surface morphology were characterized. Based on the CuPc micronanocrystalline, a large scale was proposed. The method of preparing organic micro-nano single crystal field-effect transistor with high efficiency is "glass fiber mask method", which mainly uses the characteristics of light glass fiber, easy to adsorb on the surface of insulating layer without falling off. Using it as a mask, 15 devices can be obtained on the same substrate at one time. The test results show that all the devices have field effect performance. The maximum mobility is 0.7 cm2V-1s-1.The transistor array is fabricated by using the improved glass fiber mask method based on the red fluorene micronanocrystalline crystal. The influence of the thickness of semiconductor layer on the performance of the device is studied. 2. Based on the red fluorene micronanocrystalline crystal, a method of constructing the "flexible external testable" field-effect transistor is proposed. The results show that the flexible devices have high mobility, high stability and no hysteresis. The experimental results of static bending show that the mobility of flexible devices increases under compression strain. The results of dynamic bending test show that the flexible device has a good response to the tensile strain in the range of -0.1% to -0.2%. The response sensitivity is as high as 123, and the response and recovery times are 0.9 s and 1 s respectively. In a word, flexible organic micro and nano single crystal field effect transistors can be used for high sensitivity monitoring of small strain. The prospect of its application in strain sensor is shown.
【学位授予单位】：东北师范大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN386;TP212

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