硅通孔热应力导致器件迁移率变化分析

发布时间：2018-02-06 03:06

  本文关键词： 硅通孔 热应力 迁移率 阻止区　出处：《西安电子科技大学学报》2017年06期 　论文类型：期刊论文

【摘要】：针对硅通孔热应力导致的沿不同晶向放置的器件迁移率变化进行了讨论.依据弹性理论,铜和硅衬底之间的热膨胀系数失配能够产生硅通孔热应力,考虑压阻效应,热应力将导致载流子迁移率的变化.因此,文中首先依据平面应变理论,建立了硅通孔热应力的紧凑解析模型;接着利用Matlab仿真,分别得出了硅通孔热应力对沟道方向沿[100]和[110]的载流子迁移率的影响,并考虑到可靠性,定义了阻止区;最后,得出了[100]晶向和[-110]晶向应分别作为N沟道金属氧化物半导体器件和P沟道金属氧化物半导体器件的优先选择的结论.
[Abstract]:Based on the elastic theory, the thermal expansion coefficient mismatch between copper and silicon substrate can produce silicon through pore thermal stress. Considering the piezoresistive effect, the thermal stress will lead to the change of carrier mobility. Then, by using Matlab simulation, the direction of the through hole thermal stress along the channel is obtained. [100] and. [The influence of carrier mobility of 110] and taking into account the reliability, the blocking zone is defined. Finally, the. [100] crystallographic sum. [The crystal orientation should be considered as the preferential choice for N channel metal oxide semiconductor devices and P channel metal oxide semiconductor devices, respectively.
【作者单位】： 西安电子科技大学微电子学院;
【基金】：国家自然科学基金资助项目(61574106,61574104) 国家部委基金资助项目(9140A23060115DZ01062) 陕西省科技统筹创新工程计划资助项目(2015KTCQ01-5)
【分类号】：TN405
，

本文编号：1493423