晶体管场环终端技术的优化设计及应用

发布时间：2018-02-09 03:30

  本文关键词： 浮空场环 高耐压 场环优化 场环间距　出处：《电子技术应用》2017年01期 　论文类型：期刊论文

【摘要】：主要研究晶体管中浮空场环的技术原理和设计优化及其在实际应用中对晶体管耐压性能的影响。在实际产品版图设计中采用了浮空场环设计并通过优化场环间距来满足晶体管的高耐压要求,并通过Silvaco软件进行工艺和器件仿真。根据仿真结果及理论计算进行浮空场环优化设计,并通过实际流片验证浮空场环对晶体管耐压性能的提高效果。
[Abstract]:This paper mainly studies the technical principle and design optimization of floating field ring in transistors and its influence on transistor voltage performance in practical application. The floating field ring design is adopted in the layout design of practical products and the field ring spacing is optimized by means of optimization of field ring spacing. To meet the high voltage requirements of transistors, According to the simulation results and theoretical calculation, the optimization design of floating field ring is carried out, and the improvement effect of floating field ring on transistor voltage performance is verified by actual flow sheet.
【作者单位】： 航天科技集团九院七七一研究所;
【分类号】：TN32
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本文编号：1496965