无源超高频RFID标签芯片电源产生电路的设计

发布时间：2018-02-12 04:16

  本文关键词： 超高频RFID 低功耗 电荷泵 亚阈值 LDO　出处：《华中科技大学》2015年硕士论文　论文类型：学位论文

【摘要】：RFID(Radio Frequency Identification)技术,是一种非接触式的自动识别技术,它利用射频信号的电感耦合或者电磁反向散射机制实现对物体的自动识别并获取其数据信息。本论文针对无源超高频RFID标签芯片具体应用需求,对其物理基础、能量链路、系统架构、性能指标和电源产生电路进行了详细的研究。无源超高频RFID标签芯片电源产生电路主要包括以下几个模块:整流电路模块、基准电流源模块、基准电压源模块和稳压电路模块。本文整理了整流电路几种电路结构,并针对Dickson电荷泵倍压整流电路做了详细的原理分析,给出了基于阈值电压补偿技术的电路设计方案。针对低功耗低成本的电路设计需求,采用亚阈值技术实现基准电流源和基准电压源的电路设计。稳压电路采用传统的LDO结构,在满足系统需求的前提下实现了低功耗设计要求。由于当标签芯片工作在近距离时,标签天线接收到的能量很大,给出了过压保护电路设计方案,避免了近距离工作时后级电路被击穿。本文基于UMC 0.18μm Embedded E2PROM 1.8 V/5 V 2P6M LLP工艺,完成了电源产生电路的设计。整流电路采用基于二极管连接的MOS管主从电荷泵结构。在-5.2 dBm的输入功率下,实现了22.69%的能量转换效率。基准电压源电路采用全MOS管电路结构,实现了640 mV的电压输出,温度系数达到16.82 ppm/℃,当输入电压VCC为1.8 V时,功耗低至194 nA。基准电流源采用亚阈值技术进行设计,实现了99.7 nA的电流输出,温度系数为48.45 ppm/℃,当输入电压VCC为1.8 V时,功耗低至431.4 nA。稳压电路输出1.8 V的直流电压,当输入电压VCC为2 V时,功耗为3μA,满足低功耗的设计需求。过压保护电路实现了在12.2 dBm的输入功率下,将电荷泵输出电压钳位在3.3 V,性能良好。
[Abstract]:RFID(Radio Frequency Identification is a non-contact automatic identification technology. It uses inductive coupling of radio frequency signal or electromagnetic backscattering mechanism to realize automatic recognition of objects and obtain data information. This paper aims at the specific application requirements of passive UHF RFID tag chip and its physical foundation and energy link. The system architecture, performance index and power generation circuit are studied in detail. The passive UHF RFID tag chip power generation circuit mainly includes the following modules: rectifier circuit module, reference current source module, Reference voltage source module and voltage stabilizing circuit module. In this paper, several circuit structures of rectifier circuit are arranged, and the principle of Dickson charge pump double voltage rectifier circuit is analyzed in detail. The circuit design scheme based on threshold voltage compensation technology is presented. The sub-threshold technique is adopted to realize the circuit design of the reference current source and the reference voltage source, and the voltage stabilizing circuit adopts the traditional LDO structure, aiming at the low power consumption and low cost circuit design requirements, the sub-threshold technology is used to realize the circuit design of the reference current source and the reference voltage source. In order to meet the requirements of the system, the design of low power consumption is realized. Because the tag antenna receives a lot of energy when the tag chip is working at close range, the design scheme of over-voltage protection circuit is given. This paper is based on UMC 0.18 渭 m Embedded E2PROM 1.8 V / 5 V 2P6M LLP process. The design of power generation circuit is completed. The rectifier circuit adopts the structure of MOS transistor master and slave charge pump based on diode connection. Under the input power of -5.2 dBm, the energy conversion efficiency of 22.69% is realized. The reference voltage source circuit adopts the full MOS circuit structure. The output voltage of 640mV is realized, the temperature coefficient reaches 16.82 ppmC. When the input voltage VCC is 1.8V, the power consumption is as low as 194nA. the reference current source is designed by sub-threshold technique, and the current output of 99.7nA is realized. The temperature coefficient is 48.45ppm / 鈩，

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