硅基氧化锌纳米结构材料的白光特性研究

发布时间：2018-02-13 02:21

本文关键词： 多孔硅柱状阵列硅基氧化锌复合材料锰掺杂发光机制显色指数　出处：《北京化工大学》2015年硕士论文　论文类型：学位论文

【摘要】：硅是重要的半导体材料,在当今的科技生产中占据着重要地位,是集成电路等制造中不可或缺的材料,被广泛应用在计算机、信息通讯、国防科技等生产生活领域,保证并改善着我们的生活质量。多孔硅的强光致发光现象,开启了硅在光电领域的应用,引起了各国的关注,为光电材料与现代技术相结合提供了广阔诱人的前景。氧化锌是一种十分具有潜力的半导体材料,有优异的稳定性、高效的发光性能和光电转换性能,在多个领域范围内得到了广泛应用。现有成熟的生产工艺可精确控制氧化锌材料的尺寸与形貌,当氧化锌材料的尺寸在纳米量级时其发光性能尤为显著,是一种优秀的纳米发光材料。氧化锌与多孔硅相结合,产生硅基氧化锌复合材料,集成了两种半导体材料的特点,具有优秀的光学性能、电学性能和高效的光电转化性能。本论文针对硅基氧化锌材料的制备和性能,对其基底多孔硅柱状阵列材料(porous silicon pillar array:PSPA)、硅基氧化锌复合材料及其掺杂改性材料进行了结构分析、性能测试等方面进行了研究与讨论,主要内容和结果有以下几个方面：利用有铁离子参与的水热腐蚀法制备PSPA。抛光硅晶片表面被腐蚀出微米量级峰柱状阵列结构,每个柱状在纳米量级都由硅量子点及表面不均匀氧化层包裹构成的海绵状结构组成,及PSPA进行形貌结构、元素组成、发光特性和激发特性等的表征与分析。以PSPA为衬底,用液相法制备硅基氧化锌复合材料。PSPA特殊的表面结构可以减小两种半导体材料晶格失配带来的界面应力,使氧化锌纳米材料层均匀生长在PSPA材料表面,呈周期性阵列结构,提高了复合材料的发光效率。本文分析了复合材料的结构与发光性能等并结合能带理论解释其光致发光机制。利用锰离子掺杂提高硅基氧化锌材料的发光性能及显色指数。硅基氧化锌材料的发光主要来源于氧化锌纳米材料层,其发光显色偏蓝绿,通过锰离子掺杂为硅基氧化锌复合发光提供了新的发光中心与发光能级,使硅基氧化锌掺杂材料的发光更接近自然光,为未来光源的发展提供更多可能。
[Abstract]:Silicon is an important semiconductor material, occupies an important position in the current scientific and technological production, is an indispensable material in the manufacture of integrated circuits, and has been widely used in the fields of computer, information communication, national defense science and technology and other fields of production and life. Ensure and improve our quality of life. The phenomenon of strong photoluminescence in porous silicon has opened up the application of silicon in the field of photoelectricity, which has attracted the attention of all countries. Zinc oxide is a potential semiconductor material with excellent stability, high luminescence and optoelectronic conversion performance. It has been widely used in many fields. The existing mature production process can accurately control the size and morphology of zinc oxide material, especially when the size of zinc oxide material is in nanometer order of magnitude. Zinc oxide combines with porous silicon to produce silicon-based zinc oxide composite, which integrates the characteristics of two kinds of semiconductor materials and has excellent optical properties. In this paper, the preparation and properties of silicon based zinc oxide materials were studied. The structure of porous silicon pillar array-PSPA, Si-based zinc oxide composites and their doped modified materials were analyzed. The main contents and results are as follows: PSPAs were prepared by hydrothermal etching with iron ions. The surface of polished silicon wafer was corroded into micron scale columnar array structure. Each columnar in nanometer order is composed of silicon quantum dots and spongy structure encapsulated by non-uniform oxide layer on the surface, and PSPA is used to characterize and analyze the morphology, elemental composition, luminescence characteristics and excitation characteristics. PSPA is used as the substrate. The special surface structure of silicon based zinc oxide composite 路PSPA prepared by liquid phase method can reduce the interfacial stress caused by lattice mismatch of two kinds of semiconductor materials and make the ZnO nanomaterial layer grow uniformly on the surface of PSPA material with periodic array structure. In this paper, the structure and luminescence properties of the composites are analyzed, and the photoluminescence mechanism is explained by the energy band theory. The luminescence properties of silicon based zinc oxide materials are improved by doping manganese ions. The luminescence of silicon-based zinc oxide material mainly comes from the zinc oxide nanomaterial layer. The luminescence of zinc oxide doped with manganese ions provides a new luminescence center and luminescent energy level, which makes the luminescence of silicon based zinc oxide doped material closer to natural light, and provides more possibilities for the future development of light source.
【学位授予单位】：北京化工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.2;TB383.1

【共引文献】