微波在半导体退火工艺中的应用

发布时间：2018-02-14 08:18

  本文关键词： 微波 退火 离子注入 快速热处理工艺(RTP) 热预算　出处：《微纳电子技术》2017年12期 　论文类型：期刊论文

【摘要】：针对传统快速热处理工艺(RTP)在退火过程中引起杂质再扩散导致难以制作浅结器件的问题,采用了微波退火的方式进行退火,有效降低了热预算,能够解决杂质再扩散的问题。相比传统RTP退火,微波的退火机理具有特殊性,其不仅有微波的热效应还有微波的非热效应,使微波退火能够在较低的温度下实现杂质激活和晶格修复。实验表明,在注入能量为15 keV、注入剂量为1×1015 cm-2时,P31注入的样品经微波退火后其方块电阻均值小于200Ω/,片内不均匀度小于3%,最高退火温度仅约为400℃,热预算远低于传统RTP退火。该实验结果表明,微波退火的方法在浅结器件的制备工艺中有较大的应用潜力。
[Abstract]:In view of the problem that the traditional rapid heat treatment process (RTP) causes the impurity rediffusion in the annealing process, it is difficult to fabricate the shallow junction device. The microwave annealing method is used to anneal the device, which effectively reduces the thermal budget. Compared with traditional RTP annealing, microwave annealing mechanism has its particularity. It not only has the thermal effect of microwave but also the non-thermal effect of microwave. So that microwave annealing can realize impurity activation and lattice repair at lower temperature. When the implanted energy is 15 Kev and the implantation dose is 1 脳 10 15 cm-2, the average square resistance of the sample implanted by microwave annealing is less than 200 惟 / r, the uniformity in the chip is less than 3 and the maximum annealing temperature is only about 400 鈩，

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