一种过压保护器的关键性能研究与改进

发布时间：2018-02-22 15:36

本文关键词： 晶闸管雪崩击穿场版掺杂浓度终端效应接触电阻　出处：《西安电子科技大学》2015年硕士论文　论文类型：学位论文

【摘要】：半导体过压保护器件是一种新型的电压抑制器,由于其响应速度快、体积小、性能稳定、短路保护及单位面积吸收浪涌能力强而广泛地应用于通信设备的抗浪涌保护电路中。本课题主要是针对机理复杂、目前应用广泛的开关型半导体保护器件的机理进行研究,分析各参数的意义以及与制造过程中各工艺的关系,研究关键工艺控制点和控制的方法,进而提高现有半导体保护器件的性能,使之能够替代进口产品,提高我国在该领域的生产设计水平,使之达到国际同类产品水平。本文首先分析了半导体保护器件的基本结构,建立了器件模型,深入研究了各工作状态下的工作机理和器件的触发机制,重点对器件的正向导通、正向阻断和门极触发等最重要的工作状态的机理进行了探究,为进行后续性能改进提供理论基础。其次,分析了器件的基本特性参数和各种应用方法,重点对电压保护应用进行了分析,提出了需要改进的性能参数。再次,针对需要改进的性能参数,结合器件的物理结构和工艺特点,分析了影响器件关键性能参数的工艺因素,提出了改进的方法,进行了相关工艺实验,并根据实验结果,综合优化了改进方案。最后,对优化的方案进行了产品的批量流片验证,证明了优化方案的可行性和可靠性,最终使得产品的性能得到了改进。
[Abstract]:Semiconductor overvoltage protection device is a new type of voltage suppressor, because of its fast response speed, small volume and stable performance. Short circuit protection and absorbing surge per unit area are widely used in the anti-surge protection circuit of communication equipment. The significance of each parameter and its relationship with various processes in manufacturing process are analyzed, and the key process control points and control methods are studied, so as to improve the performance of existing semiconductor protective devices and enable them to replace imported products. In this paper, the basic structure of semiconductor protective devices is analyzed, and the device model is established. The working mechanism of the device and the trigger mechanism of the device are studied in detail, and the mechanism of the most important working state, such as forward conduction, forward blocking and gate trigger, is emphasized. It provides a theoretical basis for further performance improvement. Secondly, the basic characteristic parameters and various application methods of the device are analyzed, the application of voltage protection is analyzed, and the performance parameters that need to be improved are put forward. In view of the performance parameters that need to be improved, combined with the physical structure and process characteristics of the device, the process factors affecting the key performance parameters of the device are analyzed, the improved method is proposed, and the relevant process experiments are carried out, and according to the experimental results, Finally, the batch flowsheet verification of the optimized scheme is carried out, which proves the feasibility and reliability of the optimized scheme, and finally improves the performance of the product.
【学位授予单位】：西安电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN303

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