超高速碰撞形成的带电粒子对半导体器件的电磁干扰特性研究

发布时间：2018-02-25 07:13

本文关键词： 超高速碰撞带电粒子电磁干扰半导体器件　出处：《北京理工大学》2015年硕士论文　论文类型：学位论文

【摘要】：当前空间碎片与航天器的碰撞事件日益频繁,科学家们在寻找原因的过程中逐渐发现:超高速碰撞产生的带电粒子对航天器的电磁毁伤并不亚于其力学毁伤。超高速碰撞过程中形成的带电粒子在运动的过程中产生的电磁场以及带电粒子本身的注入会干扰半导体器件正常工作甚至导致半导体器件的毁伤,从而导致整个电路系统的失效。本文通过6.4mm半径铝弹丸超高速撞击铝靶板来模拟太空中碎片撞击航天器的过程,研究其对半导体器件的电磁干扰效应。主要内容如下:1)超高速碰撞过程中电磁效应的产生是由于在弹丸超撞击靶板的过程中会导致材料的电离,形成带电粒子。带电粒子的电荷分布特征直接影响着其对半导体器件的电磁干扰效应。本文首先对超高速碰撞产生的带电粒子的电荷分布特征进行研究,设计多角度电荷收集系统,在正碰撞及斜碰撞条件下收集超高速碰撞产生的电荷,从而推断超高速碰撞产生的带电粒子的电荷分布模型,实验结果表明在超高速正碰撞的条件下产生的正电荷主要分布在54o-81o角度区域;在超高速碰撞角度为45o的条件下正电荷主要分布在45o-90o角度区域。并且据此进一步推断出超高速碰撞产生带电粒子的电荷分布模型。2)根据半导体器件内部的结构及其制作工艺结合超高速碰撞产生的带电粒子的电荷分布规律,研究超高速碰撞产生的带电粒子对半导体器件的干扰机理。根据带电粒子的分离电荷量推算出超高速碰撞产生的电磁场,通过计算说明超高速碰撞产生的电磁场足以干扰半导体器件正常工作甚至造成毁伤;研究带电粒子注入半导体器件的引脚,PN结内部以及电介质内部对其产生干扰的机理,通过理论分析证明超高速碰撞产生的带电粒子注入到半导体器件内部足以干扰半导体器件正常工作。3)在靶板周围布置半导体器件进行测试,实验结果表明超高速碰撞过程中,在与靶板成63o-72o及81o-90o角度区间内半导体器件更容易遭受到干扰效应;场效应管制成的半导体器件比晶体三极管制成的半导体器件更容易遭受干扰;在超高速碰撞产生的综合效应下距离碰撞点越近产生的干扰越大;电磁场对半导体器件的干扰主要发生在81o-90o角度区间;超高速碰撞对半导体器件的干扰是有累积效应的。
[Abstract]:At present, the collision between space debris and spacecraft is becoming more and more frequent, In the process of finding out the cause, scientists gradually found that the electrically charged particles produced by hypervelocity collision caused no less electromagnetic damage to the spacecraft than the mechanical damage. The electrically charged particles formed during the hypervelocity collision were in the process of moving. The electromagnetic field and the injection of charged particles will interfere with the normal operation of semiconductor devices and even lead to the destruction of semiconductor devices. In this paper, the aluminum projectile with a radius of 6.4 mm is used to simulate the impact of debris in space on the spacecraft by hitting the aluminum target with a hypervelocity of 6.4mm radius. The main contents of this study are as follows: 1) the electromagnetic effect in hypervelocity collision is due to the ionization of the material during the hyperimpact of the projectile into the target plate. The charge-distribution characteristics of charged particles directly affect the electromagnetic interference effect on semiconductor devices. In this paper, the charge-distribution characteristics of charged particles produced by hypervelocity collisions are studied. A multi-angle charge collection system is designed to collect the charges generated by hypervelocity collisions under the condition of orthotropic and oblique collisions, so as to infer the charge distribution model of charged particles produced by hypervelocity collisions. The experimental results show that the positive charges generated under hypervelocity orthotropic collision are mainly distributed in the 54o-81o angle region. Under the condition that the hypervelocity collision angle is 45o, the positive charge mainly distributes in the 45o-90o angle region. Based on this, the charge distribution model of charged particles produced by hypervelocity collision is deduced. 2) according to the structure of semiconductor device and the structure of semiconductor device, the charge distribution model of charged particle produced by hypervelocity collision is deduced. The fabrication process combines the charge distribution law of charged particles produced by hypervelocity collision. The interference mechanism of charged particles produced by hypervelocity collision to semiconductor devices is studied. Based on the separation charge of charged particles, the electromagnetic field caused by hypervelocity collision is calculated. The calculation results show that the electromagnetic field generated by hypervelocity collision is sufficient to interfere with the normal operation of semiconductor devices and even cause damage, and the mechanism of interference by charged particles injected into the PN junction of semiconductor devices as well as in dielectric is studied. It is proved by theoretical analysis that charged particles injected into semiconductor devices due to hypervelocity collisions are enough to interfere with normal operation of semiconductor devices. 3) the semiconductor devices are arranged around the target plate for testing. The experimental results show that in the process of hypervelocity collision, In the range of 63o-72o and 81o-90o angle with the target plate, the semiconductor device is more susceptible to interference, and the semiconductor device made of FET is more susceptible to interference than the semiconductor device made by transistor. Under the comprehensive effect of hypervelocity collision, the closer the collision point is, the greater the interference is; the interference of electromagnetic field to semiconductor device mainly occurs in the angle range of 81o-90o; the interference of hypervelocity collision to semiconductor device has cumulative effect.
【学位授予单位】：北京理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN303

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