AlNiGd金属玻璃相变光刻湿法刻蚀工艺研究

发布时间：2018-02-25 20:16

本文关键词： 相变光刻相变材料金属玻璃薄膜湿法刻蚀选择性刻蚀　出处：《华中科技大学》2015年硕士论文　论文类型：学位论文

【摘要】：光刻技术是整个半导体加工工艺的基础技术,在半导体制造体系中占有重要地位。但是随着科技的不断发展,传统有机光刻方法越来越临近其物理极限,近年来各种新型光刻方法不断被提出,其中相变光刻技术被认为是最有潜力的新型光刻技术之一。而新型相变光刻技术则是采用无机相变材料作为光刻胶,利用热致相变的原理使用激光器使材料局部发生相变,利用材料非晶态和晶态在刻蚀液中刻蚀速率的不同来得到刻蚀图形。但是现今人们对于相变光刻的研究主要集中在硫系化合物上。本文选用新型相变光刻材料——AlNiGd金属玻璃材料来取代传统的硫系化合物相变材料。对基于AlNiGd金属玻璃相变光刻的湿法工艺进行了深入的研究与探讨。本文首先使用磁控溅射法制备出单层和多层Al Ni Gd金属玻璃薄膜样品(ZnS-SiOB2B/AlNiGd/ZnS-SiOB2B),在此基础上通过实验筛选,最终分别选用混酸(质量分数为2%硝酸、5%冰醋酸、80%磷酸、13%水)和HF溶液刻蚀液作为单层AlNiGd金属玻璃薄膜样品和多层AlNiGd金属玻璃薄膜结构刻蚀液,对刻蚀实验方法进行了摸索与优化。然后利用真空退火工艺对AlNiGd金属玻璃薄膜样品和单层ZnS-SiOB2B(80%:20%)薄膜进行退火,之后使用混酸(质量分数为2%硝酸、5%冰醋酸、80%磷酸、13%水)和HF溶液分别对退火前后的Al Ni Gd金属玻璃薄膜样品和单层ZnS-SiOB2B(80%:20%)薄膜样品进行刻蚀,测试出退火前后AlNiGd金属玻璃薄膜样品和单层ZnS-SiOB2B(80%:20%)薄膜样品在所选刻蚀液中的选择刻蚀比。在此基础上引进课题组搭建的相变光刻平台,利用光学平台对单层和多层的薄膜样品进行光刻,再次采用之前所选的刻蚀液,对光刻后的样品进行刻蚀,最终得到预期的刻蚀图形。
[Abstract]:Photolithography is the basic technology of the whole semiconductor processing technology and plays an important role in the semiconductor manufacturing system. However, with the development of science and technology, the traditional organic lithography approaches its physical limit more and more. In recent years, a variety of new lithography methods have been proposed, among which phase change lithography is considered to be one of the most promising new lithography technologies, and the new phase change lithography technology uses inorganic phase change materials as photoresist. By using the principle of thermo-induced phase transition, the laser is used to make the local phase transition of the material occur. The etching patterns are obtained by using the different etching rates of amorphous and crystalline materials in the etching solution. However, the research on phase change lithography is mainly focused on sulfur compounds. In this paper, a new type of phase change lithography material, AlNiGd, is selected. The wet process based on phase change lithography of AlNiGd metallic glass was studied and discussed. In this paper, monolayers and multilayers were prepared by magnetron sputtering. ZnS-SiOB _ 2B / AlNiGd / ZnS-SiOB _ 2B _ (2) AlNiGd metallic glass thin film samples were screened by experiments. In the end, mixed acid (2% nitrate 5% glacial acetic acid 80% Phosphate 13% water) and HF solution were used as monolayer AlNiGd metallic glass film samples and multilayer AlNiGd metallic glass film structure etching solution, respectively. The etching method was studied and optimized. Then the AlNiGd metallic glass films and the single layer ZnS-SiOB _ 2B _ 2O _ (80: 20) thin films were annealed by vacuum annealing. After that, the samples of Al Ni Gd metallic glass film and single layer ZnS-SiOB 2B 2 BU 80: 20 were etched by mixed acid (2% nitrate 5% glacial acetic acid 80% Phosphate 13% water) and HF solution before and after annealing, respectively. The selective etching ratio of AlNiGd metallic glass film sample and single layer ZnS-SiOB 2BU 80: 20 film sample in the selected etching solution was measured before and after annealing. On this basis, the phase change lithography platform built by our research group was introduced. The monolayer and multilayer thin film samples were etched by optical platform, and the sample after lithography was etched with the previously selected etching liquid again, and the expected etching pattern was obtained.
【学位授予单位】：华中科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN305.7

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