Zn、Cu掺杂AlN纳米结构的制备及发光性能的研究

发布时间：2018-02-27 03:33

本文关键词： 纳米结构掺杂改性光致发光　出处：《兰州大学》2015年硕士论文　论文类型：学位论文

【摘要】：AlN作为第三代半导体材料的代表,其6.2eV的特宽带隙使其在发光器件的应用方面引起了人们极大的关注。但是,由于制备AlN材料较困难,所需的条件较严苛,因此限制了它的发展。同时,为了提高AlN材料的性能,通常对其掺杂不同的元素,来满足不同方面的需求。本文采用CVD的方法,通过改变实验中的可控参数,获得了AlN最佳的生长条件。同时研究了对AlN掺杂不同的元素时,其形貌和性能的变化。主要的研究内容如下：(1)无水氯化锌为掺杂源制备Zn掺杂AlN样品。与未掺杂样品相比,Zn的合入促进了AlN的表面扩散但却抑制了其纵向生长速度。PL光谱显示,样品在紫外光区展现了很好的发光性能。将样品在高温下进行退火处理,所得PL光谱证明272nm的发光峰与Zn有关。通过改变NH3流量,发现30sccm流量值下,样品具有最高的结晶度和发光强度。同样的条件下,Zn掺杂量的改变影响了与氧相关的缺陷能级,改变了峰之间的相对强度。(2)纳米锌粉为掺杂源制备Zn掺杂AlN样品。生长温度显著的改变了纳米结构的表面形貌和尺寸。Zn的掺杂引入了新的缺陷和杂质能级,在紫外区有效的调节了AlN的发光波长,同时导致峰位和峰的相对强度发生改变。而Si片的放置角度也影响了Zn的掺杂,平行放置更有利于Zn的合入。(3)无水CuCl2为掺杂源制备Cu掺杂AlN样品。样品在可见光波段表现出了良好的发光性能。探讨了生长温度、掺杂量、NH3/Ar流量比对样品的形貌和发光的影响。生长温度和NH3/Ar流量比对Cu的掺入起了重要的作用。当Cu掺杂量比较大时,样品中出现了合金相AlCu,导致晶体中铝空位增多,进而影响了各个发光峰之间的相对强度。
[Abstract]:As the representative of the third generation semiconductor material, AlN has attracted much attention because of its wide band gap of 6.2 EV. However, due to the difficulty of preparing AlN materials, the necessary conditions are more severe. In order to improve the properties of AlN materials, different elements are usually doped to meet the needs of different aspects. In this paper, the method of CVD is used to change the controllable parameters in experiments. The optimum growth conditions of AlN were obtained. At the same time, when AlN was doped with different elements, The main contents of this study are as follows: 1) Zn-doped AlN samples were prepared by anhydrous zinc chloride as dopant source. Compared with the undoped samples, the combination of Zn and Zn promoted the surface diffusion of AlN, but inhibited its longitudinal growth rate. The PL spectra of samples annealed at high temperature show that the luminescence peak at 272 nm is related to Zn. By changing the flow rate of NH3, it is found that the flow rate of 30sccm is at 30sccm. The sample has the highest crystallinity and luminescence intensity. Zn-doped AlN samples were prepared by changing the relative strength between peaks. The growth temperature significantly changed the surface morphology and size of the nanostructures. Zn doping introduced new defects and impurity energy levels. The luminescence wavelength of AlN was adjusted effectively in the ultraviolet region, and the peak position and the relative intensity of the peak changed, and the placement angle of Si wafer also affected the doping of Zn. Parallel placement is more favorable for Zn / CuCl2 doping source to prepare Cu-doped AlN samples. The samples exhibit good luminescence properties in the visible light band. The growth temperature is discussed. The growth temperature and the flow rate of NH3/Ar play an important role in the doping of Cu. When the doping amount of Cu is high, the Al Cu phase appears in the sample, which leads to the increase of Al vacancy in the crystal. Furthermore, the relative intensity of each luminescence peak is affected.
【学位授予单位】：兰州大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304

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